The Bias-Controlled Magnetoimpedance Effect in a MIS Structure

Abstract:

We report the giant magnetoimpedance effect in a ferromagnetic metal/insulator/semiconductor (MIS) diode with the Schottky barrier based on the Fe/SiO₂/n-Si structure. It was established that the applied magnetic field strongly influences the impedance of the structure in the temperature range 10—30 K. In this range, there is the pronounced peak in the temperature dependence of the real part of the impedance at frequencies from 10 Hz to 1 MHz. The effect of the magnetic field manifests itself as a shift of the peak of the real part of the impedance. Under the action of a bias voltage of 5 V, the peak of the real part of the impedance similarly shifts toward lower temperatures with and without applied magnetic field.

• Periodical: Solid State Phenomena (Volumes 233-234)
• Pages: 451-455
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.233-234.451
• Online since: July 2015
• Authors: Dmitry A. Smolyakov*, Anton S. Tarasov, Arthur O. Gustaitsev, Nikita V. Volkov
• Keywords: Bias, Magnetoimpedance, MIS-Structure

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