Effect of Additive Oxide Amount on Gas Pressure Sintering of Silicon Nitride

Abstract:

Article Preview

Info:

Periodical:

Solid State Phenomena (Volumes 25-26)

Main Theme:

Edited by:

A.C.D. Chaklader and J.A. Lund

Pages:

403-410

DOI:

10.4028/www.scientific.net/SSP.25-26.403

Citation:

N. Hirosaki et al., "Effect of Additive Oxide Amount on Gas Pressure Sintering of Silicon Nitride ", Solid State Phenomena, Vols. 25-26, pp. 403-410, 1992

Online since:

January 1992

Export:

Price:

$35.00

In order to see related information, you need to Login.