The Study on the Effect of Wet and Dry Oxidation of Nickel Thin Film on Sensitivity of EGFET Based pH Sensor

Abstract:

The study is based on the use of NiO as an extended gate of field effect transistor (EGFET) using ITO/glass as a substrate for the sensitivity of pH sensor membrane. The NiO thin film was synthesis by wet and dry thermal oxidation method of Nickel metal thin film deposited by RF sputtering. The sensitivity of the NiO membrane was measured and comparatively analysed against the two different oxidation methods. Structural and morphological properties were investigated for both thin films. The sensitivities measurements of the two membranes were made as pH sensors. The results confirmed that NiO membrane grown by dry oxidation had much better sensitivity (87 μA/pH and 54 mV/pH) compared to wet oxidation membrane sample (52 μA/pH and 48 mV/pH).

• Periodical: Solid State Phenomena (Volume 290)
• Pages: 199-207
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.290.199
• Online since: April 2019
• Authors: Dauda Abubakar*, Naser Mahmoud Ahmed, Shahrom Mahmud
• Keywords: Dry Oxidation, EGFET, Nanostructure, Nickel Oxide, pH Sensor, Wet Oxidation

References

[1] F. A. Sabah, N. M. Ahmed, Z. Hassan, and N. H. Al-Hardan, Sensitivity of CuS and CuS/ITO EGFETs implemented as pH sensors,, Appl. Phys. A Mater. Sci. Process., vol. 122, no. 9, p.1–6, (2016).

DOI: 10.1007/s00339-016-0362-7

[2] R. Yossawat, P. Supanit, B. Win, K. Narathon, P. Apirak, J. Wutthinan, S. Awirut, C. Woraphan, H. Charndet, P. Amporn, and N. Jiti, High sensitive nanocrystal titanium nitride EG-FET pH sensor,, Adv. Mater. Res., vol. 802, no. September, p.232–236, (2013).

DOI: 10.4028/www.scientific.net/amr.802.232

[3] C. Tsai, J. Chou, T. Sun, and S. Hsiung, Study on the sensing characteristics and hysteresis effect of the tin oxide pH electrode,, vol. 108, p.877–882, (2005).

DOI: 10.1016/j.snb.2004.11.050

[4] S. Chang, C. Li, K. Chen, S. Chang, C. Hsu, T. Hsueh, and H. Hsueh, Investigation of ZnO-Nanowire-Based Extended-Gate Field-Effect-Transistor pH Sensors Prepared on Glass Substrate,, vol. 4, no. xx, p.1–5, (2012).

DOI: 10.1166/sam.2012.1410

[5] J. C. Fernandes, R. A. S. Nascimento, and M. Mulato, Effects of Measurements Conditions on an Extended-Gate FET used as pH sensor,, Mater. Res., vol. 19, no. ahead, p.0, (2016).

DOI: 10.1590/1980-5373-mr-2015-0248

[6] M. A. Rosdan, S. H. Herman, W. F. H. Abdullah, N. S. Kamarozaman, and M. I. Syono, Sputtered Titanium Dioxide Thin Film for Extended-Gate FET Sensor Application,, p.219–222, (2013).

DOI: 10.1109/rsm.2013.6706513

[7] R. De Castro, D. Tadeu, M. Mulato, and E. Maria, Comparative Sensibility Study of WO 3 ph Sensor Using EGFET and Ciclic Voltammetry,, Mater. Res., vol. 18, no. 1, p.15–19, (2015).

DOI: 10.1590/1516-1439.252513

[8] S. Wu, Y. Wu, and C. Lin, High performance ISFET-based pH sensor utilizing low- cost industrial-grade touch panel films as the gate structure,, p.2131–2133, (2014).

DOI: 10.1109/jsen.2015.2455057

[9] V. K. K. V. Khanna, Fabrication of ISFET microsensor by diffusion-based Al gate NMOS process and determination of its pH sensitivity from transfer characteristics.,, Indian J. Pure Appl. Phys., vol. 50, no. 3, p.199–207, (2012).

[10] F. Lin, H. Chang, and S. Hsiao, Preparation and Characterization of Nickel Oxide- Based EGFET pH Sensors,, in Ninth International Conference on Sensing Technology Preparation, 2015, p.402–405.

DOI: 10.1109/icsenst.2015.7438430

[11] J. Šauta Ogorevc, C. Parameswaran, R. P, and V. V, Comparison Of Wet And Dry Oxidation Of Silicon Dioxide Engineering Essay,, V.I.T University, 2015. [Online]. Available: www.uniassignment.com/essay-samples/engineering/comparison-of-wet-and-dry-oxidation-of-silicon-dioxide-%0Aengineering-essay.php.

[12] G. M. Ali, R. H. Dhaher, and A. A. Abdullateef, pH Sensing Characteristics of EGFET based on Pd- Doped ZnO Thin Films Synthesized by Sol-gel method,, vol. 4, no. 2, p.234–238, (2015).

DOI: 10.1109/taeece.2015.7113632

[13] Y.-L. Wu, S.-P. Chang, S.-J. Chang, W. Y. Weng, and Y.-H. Lin, A Novel pH Sensor Using Extended-Gate Field-Effect Transistors with Ga2O3 Nanowires Fabricated on A Novel pH Sensor Using Extended-Gate,, Sci. Adv. Mater., vol. 6, p.1–4, (2014).

DOI: 10.1166/sam.2015.1992

[14] Y. Chiu, C. Tseng, and C. Lee, Nanostructured EGFET pH Sensors With Surface-Passivated ZnO Thin-Film and Nanorod Array,, vol. 12, no. 5, p.930–934, (2012).

DOI: 10.1109/jsen.2011.2162317

[15] B. Huang, J. Lin, and Y. Yang, ZnO / Silicon Nanowire Hybrids Extended-Gate Field-Effect,, vol. 160, no. 6, p.78–82, (2013).

[16] N. C. S. Vieira, A. Figueiredo, A. D. Faceto, A. A. A. De Queiroz, V. Zucolotto, and F. E. G. Guimarães, Sensors and Actuators B : Chemical Dendrimers / TiO 2 nanoparticles layer-by-layer films as extended gate FET for pH detection,, Sensors Actuators B. Chem., vol. 169, p.397–400, (2012).

DOI: 10.1016/j.snb.2012.01.003

[17] Z. H. Ibupoto, K. Khun, and M. Willander, Development of a pH Sensor Using Nanoporous Nanostructures of NiO,, J. Nanosci. Nanotechnol., vol. 14, no. 9, p.6699–6703, (2014).

DOI: 10.1166/jnn.2014.9373