Study on Hydriding Kinetics, Structural Properties and Electrical Conductivity of D.C. Magnetron Sputtered Mg/Al Thin Films

Abstract:

Mg/Al bilayer thin films were successfully deposited by using D.C. magnetron sputtering technique. To study the effect of hydrogenation on structural, optical and electrical properties of Mg/Al thin films, the hydrogenation of the annealed thin films was done under different hydrogen pressure (15, 30 & 30psi). The structural properties of the films were investigated by Raman spectroscopy and decrease in intensity of Raman peaks with increasing hydrogen pressure was observed; this typically confirms the existence of hydrogen in Mg/Al thin films. The thin film is of semiconducting nature and it was found that the electrical conductivity of the film decreases with increasing hydrogen pressure applied. In the hydriding kinetics of the films, it was seen that the resistivity increased along with hydrogen absorption time. Eventually, it attains the equilibrium stage indicating the hydrogen absorption in the thin films. The rate of absorption of hydrogen increases with the pressure of hydrogen over different time ranges and decreases with the absorption of hydrogen over time.

• Periodical: Solid State Phenomena (Volume 338)
• Pages: 83-90
• DOI: https://doi.org/10.4028/p-m4rfxk
• Online since: October 2022
• Authors: M.K. Jangid*, S.S. Sharma, Jaymin Ray
• Keywords: Electrical Conductivity, Hydrogenation, Raman Spectroscopy, Rate Constant, Resistivity

References

[1] R. Chaubey, S. Sahu, O.O. James, S.A. Maity, A review on development of industrial processes and emergingtechniques for production of hydrogen from renewable sustainable sources, Renew. Sustain. Energy Rev. 23 (2013) 443-462.

DOI: 10.1016/j.rser.2013.02.019

[2] M. Momirlan, T.N. Veziroglu, The properties of hydrogen as fuel tomorrow in sustainable energy system fora cleaner planet, Int. J. Hydrog. Energy 30 (2005) 795-802.

DOI: 10.1016/j.ijhydene.2004.10.011

[3] D. Pukazhselvan, N. Nasani, P. Correia, E.C. Argibay, G.O. Irurueta, D.G. Stroppa, D.P. Fagg, Evolution of reduced Ti containing phase (s) in MgH2/TiO2 system and its effect on the hydrogen storage behavior of MgH2, Journal of Power Sources 362 (2017) 174-183.

DOI: 10.1016/j.jpowsour.2017.07.032

[4] L.J. Bannenberg, C. Boelsma, K. Asano, H. Schreuders, B. Dam, B., Metal Hydride Based Optical Hydrogen Sensors. Journal of the Physical Society of Japan89 (2020), 051003-1-051003-9.

DOI: 10.7566/jpsj.89.051003

[5] M.P. Suh, H.J. Park, T.K. Prasad, D.W. Lim, Hydrogen storage in metal-organic framworks, Chem. Rev.112 (2012) 782-835.

DOI: 10.1021/cr200274s

[6] A. Zaluska, L. Zaluski, J.O. Strom Olsen, Nanocrystalline magnesium for hydrogen storage, J. Alloys Compd. 288 (1999) 217-225.

DOI: 10.1016/s0925-8388(99)00073-0

[7] J.N. Huiberts, R. Griessen, J.H. Rector, R.J. Wijngaarden, J.P. Dekker, D.G. de Groot, N.J. Koeman, Yttrium and lanthanum hydride films with switchable optical properties, Nature 380 (1996) 231-234.

DOI: 10.1038/380231a0

[8] P.H.L. Notten, M. Kremers, R. Griessen, Optical Switching of Y‐Hydride Thin Film Electrodes: A Remarkable Electrochromic Phenomenon, J. Electrochem. Soc. 143 (1996) 3348-3353.

DOI: 10.1149/1.1837210

[9] D.R. Rosseinsky, R.J. Mortimer,Electrochromic Systems and the Prospects for Devices, Advanced Materials13 (2001) 783-793.

[10] A. Remhof, S. J. van der Molen, A. Antosik, A. Dobrowolska, N. J. Koeman, R. Griessen, Switchable mirrors for visualization and control of hydrogen diffusion in transition metals, Phys. Rev. B 66 (2002) 020101(R).

DOI: 10.1103/physrevb.66.020101

[11] I.A.M.E. Giebels,Shinning Light on Magnesium Based Switchable Mirrors, PhD thesis, Vrije Universiteit, Amsterdam (2004).

[12] J. Huot, G. Liang, R. Schulz,Mechanically alloyed metal hydride systems, Appl. Phys.A72 (2001) 187-195.

DOI: 10.1007/s003390100772

[13] C.X. Shang, M. Bououdina, Y. Song, Z.X. Guo,Mechanical alloying and electronic simulations of (MgH2+M) systems (M=Al, Ti, Fe, Ni, Cu and Nb) for hydrogen storage, Int. J. Hydrogen Energy29 (2004) 73-80.

DOI: 10.1016/s0360-3199(03)00045-4

[14] C.J. Webb, A review of catalyst-enhanced magnesiumhydride as a hydrogen storage material, J PhysChem Solids84 (2015) 96-106.

[15] G. Liang, J. Huot, S. Boily, A. Van Neste, R. Schulz, Catalyticeffect of transition metals on hydrogen sorption innanocrystalline ball milled MgH2-Tm (Tm-Ti, V, Mn, Feand Ni) systems, J Alloys Compd. 292 (1999) 247-252.

DOI: 10.1016/s0925-8388(99)00442-9

[16] J. H. Dai, Y. Song, R. Yang, First Principles Study on Hydrogen Desorption from a Metal (=Al, Ti, Mn, Ni) Doped MgH2 (110) Surface, The Journal of Physical Chemistry C 114 (2010), 11328-11334.

DOI: 10.1021/jp103066g

[17] R. Domènech-Ferrer, M. GurusamySridharan, G. Garcia, F. Pi, J. Rodríguez-Viejo, Hydrogenation properties of pure magnesium and magnesium-aluminium thin films, J. Power Sources 169 (2007) 117-122.

DOI: 10.1016/j.jpowsour.2007.01.049

[18] D. Milcius, L. Pranevicius, G. Thomas, M. Lelis, Behavior of Hydrogen implanted during physical vapor deposition in Al, Mg and MgAl films, Materials science (Medþiagotyra) 10 (2004) 217-220.

[19] J.I. Pankove, D.E. Carlson J.E. Berkeyheiser, R.O. Wance, Neutralization of Shallow Acceptor Levels in Silicon by Atomic Hydrogen. Phys. Rev. Lett. 51 (1983) 2224-2225.

DOI: 10.1103/physrevlett.51.2224

[20] M.K. Jangid, M. Singh, Hydrogenation and annealing effect on electrical properties of nanostructured Mg/Mn bilayer thin films, Int. J. Hydrogen Energy 37 (2012) 3786-3791.

DOI: 10.1016/j.ijhydene.2011.05.116

[21] M. Fichtner, J. Engel, O. Fuhr, O. Kircher, O. Rubner, Nanocrystalline aluminum hydrides for hydrogen storage, Materials science and Engineering B108 (2004) 42-47.

DOI: 10.1016/j.mseb.2003.10.036

[22] H. Norde, A modified forward I-V plot for Schottky diodes with high series resistance, Journal of Applied Physics50 (1979) 5052.

DOI: 10.1063/1.325607

[23] M.K. Jangid, S.S. Sharma, D. Mathur, Y.C. Sharma, Optical, electrical and structural study of Mg/Ti bilayer thin film for hydrogen storage applications, Materials Letters: X 10 (2021) 100076.

DOI: 10.1016/j.mlblux.2021.100076

[24] S.P. Nehra, M.K. Jangid, A. Kumar, M. Singh, Y.K. Vijay, Role of hydrogen in electrical and structural characteristics of bilayer CdTe/Mn diluted magnetic semiconductor thin films, Int. J. Hydrogen Energy 34 (2009) 7306-7310.

DOI: 10.1016/j.ijhydene.2009.06.054

[25] M. Kobayashi, A. Kinoshita,K. Saraswat, H.S.P. Wong, Y. Nishi, Fermi level depinning in metal/GeSchottky junction for metal source/drain Gemetaloxide- semiconductor field-effect-transistor application, Journal of Applied Physics 105 (2009) 023702.

DOI: 10.1063/1.3065990

[26] J.Y. Lee, S.M. Byun, C.N. Park, J.K. Park, A study of the hydriding kinetics of TiFe and its alloys, J. less common Metals, 87 (1982) 149-164.

DOI: 10.1016/0022-5088(82)90050-9

[27] H. Fujii, V.K. Sinha, F. Pourarian, W.E. Wallace,Effect of hydrogen absorption on the magnetic properties of ZrMn2-xFex ternaries with a C14 structure, J.Less Common Metals85 (1982) 43-54.

DOI: 10.1016/0022-5088(82)90057-1

[28] M. Singh, The effect of hydrogen pressure on resistivity and charge carrier concentration in FeTi and FeTi-Mn thin films, Int. J. Hydrogen Energy 21 (1996) 223-228.

DOI: 10.1016/0360-3199(95)00075-5

[29] S. Tanaka, J. D. Clewley, T. B. Flanagan, The slow step for hydrogen absorption (desorption) by activated LaNi5, Journal of the Less-Common Metals 56 (1977) 137-139.

DOI: 10.1016/0022-5088(77)90228-4