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HomeSolid State PhenomenaSolid State Phenomena Vol. 352Bio-Organic Based Resistive Switching...

Bio-Organic Based Resistive Switching Random-Access Memory

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Abstract:

A non-volatile memory is a solid-state device that can retain data even power supply is terminated. It is an essential data storage device that serves as a backbone for the advancement of Internet-of-Things. There are various emerging non-volatile memory technologies in different technology-readiness levels, to replace the existing technologies with limited memory density, operating speed, power consumption, manufacturability, and data security. Of the emerging technologies, resistive switching technology is one of the most promising next generation non-volatile random-access memories. The fundamental working principle of the resistive-switching random-access memory (ReRAM) is based on memristor characterises with metal-insulator-metal stacking structure. Same as other solid-state devices, ReRAM is also facing issue of electronic waste when the memory device is discarded. To overcome this issue, bio-organic materials as green and sustainable engineering materials have been used to fabricate ReRAM. In this review, development of bio-organic based ReRAM, in particular the resistive switching mechanisms and device performance, have been discussed and challenging and future applications of this memory have been provided.

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Periodical:

Solid State Phenomena (Volume 352)

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85-93

DOI:

https://doi.org/10.4028/p-TBXv2r

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Online since:

October 2023

Authors:

Muhammad Awais, Feng Zhao, Kuan Yew Cheong*

Keywords:

Bioorganic Materials, Green Electronic, Resistive Switching Memory

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© 2023 Trans Tech Publications Ltd. All Rights Reserved

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* - Corresponding Author

[1] J.S. Meena, S.M. Sze, U. Chand, T.Y. Tseng, Overview of emerging nonvolatile memory technologies, Nanoscale Res. Lett. 9 (2014) 1–33.

DOI: 10.1186/1556-276X-9-526

[2] Z.X. Lim, K.Y. Cheong, Nonvolatile Memory Device Based on Bipolar and Unipolar Resistive Switching in Bio-Organic Aloe Polysaccharides Thin Film, Adv. Mater. Technol. 3 (2018) 1–14.

DOI: 10.1002/admt.201800007

[3] V. Gupta, S. Kapur, S. Saurabh, A. Grover, Resistive Random Access Memory: A Review of Device Challenges, IETE Tech. Rev. (Institution Electron. Telecommun. Eng. India). 37 (2020) 377–390.

DOI: 10.1080/02564602.2019.1629341

[4] A.A. Sivkov, Y. Xing, K.Y. Cheong, X. Zeng, F. Zhao, Investigation of honey thin film as a resistive switching material for nonvolatile memories, Mater. Lett. 271 (2020) 127796.

DOI: 10.1016/j.matlet.2020.127796

[5] N. Raeis-Hosseini, J.S. Lee, Resistive switching memory using biomaterials, J. Electroceramics. 39 (2017) 223–238.

DOI: 10.1007/s10832-017-0104-z

[6] K.Y. Cheong, I.A. Tayeb, F. Zhao, J.M. Abdullah, Review on resistive switching mechanisms of bio-organic thin film for non-volatile memory application, Nanotechnol. Rev. 10 (2021) 680–709.

DOI: 10.1515/ntrev-2021-0047

[7] A. Sawa, Resistive switching in transition metal oxides, Mater. Today. 11 (2008) 28–36.

DOI: 10.1016/S1369-7021(08)70119-6

[8] S. Yu, Neuro-inspired Computing Using Resistive Synaptic Devices, 2017.

DOI: 10.1007/978-3-319-54313-0

[9] J. Hur, Y.-C. Luo, A. Lu, T.-H. Wang, S. Li, A.I. Khan, S. Yu, Nonvolatile Capacitive Crossbar Array for In‐Memory Computing, Adv. Intell. Syst. 2100258 (2022) 2100258.

DOI: 10.1002/aisy.202100258

[10] S. Yu, P.Y. Chen, Emerging Memory Technologies: Recent Trends and Prospects, IEEE Solid-State Circuits Mag. 8 (2016) 43–56.

DOI: 10.1109/MSSC.2016.2546199

[11] F. Zahoor, T.Z. Azni Zulkifli, F.A. Khanday, Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications, Nanoscale Res. Lett. 15 (2020).

DOI: 10.1186/s11671-020-03299-9

[12] H. Cai, W. Kang, Y. Wang, L.A. De Barros Naviner, J. Yang, W. Zhao, High performance MRAM with spin-transfer-torque and voltage-controlled magnetic anisotropy effects, Appl. Sci. 7 (2017).

DOI: 10.3390/app7090929

[13] J. Ouyang, Two-terminal resistive switching memory devices with a polymer film embedded with nanoparticles, J. Mater. Chem. C. 3 (2015) 7243–7261.

DOI: 10.1039/c5tc01668a

[14] K. Krishnan, T. Tsuruoka, C. Mannequin, M. Aono, Mechanism for Conducting Filament Growth in Self-Assembled Polymer Thin Films for Redox-Based Atomic Switches, Adv. Mater. 28 (2016) 640–648.

DOI: 10.1002/adma.201504202

[15] H. Wang, Y. Du, Y. Li, B. Zhu, W.R. Leow, Y. Li, J. Pan, T. Wu, X. Chen, Configurable Resistive Switching between Memory and Threshold Characteristics for Protein-Based Devices, Adv. Funct. Mater. 25 (2015) 3825–3831.

DOI: 10.1002/adfm.201501389

[16] D.B. Strukov, H. Kohlstedt, Resistive switching phenomena in thin films: Materials, devices, and applications, MRS Bull. 37 (2012) 108–114.

DOI: 10.1557/mrs.2012.2

[17] I.A. Tayeb, F. Zhao, J.M. Abdullah, K.Y. Cheong, Resistive switching behaviour in a polymannose film for multistate non-volatile memory application, J. Mater. Chem. C. 9 (2021) 1437–1450.

DOI: 10.1039/d0tc04655h

[18] F. Pan, S. Gao, C. Chen, C. Song, F. Zeng, Recent progress in resistive random access memories: Materials, switching mechanisms, and performance, Mater. Sci. Eng. R Reports. 83 (2014) 1–59.

DOI: 10.1016/j.mser.2014.06.002

[19] B. Sueoka, K.Y. Cheong, F. Zhao, Study of synaptic properties of honey thin film for neuromorphic systems, Mater. Lett. 308 (2022) 131169.

DOI: 10.1016/j.matlet.2021.131169

[20] C. Mukherjee, M.K. Hota, D. Naskar, S.C. Kundu, C.K. Maiti, Resistive switching in natural silk fibroin protein-based bio-memristors, Phys. Status Solidi Appl. Mater. Sci. 210 (2013) 1797–1805.

DOI: 10.1002/pssa.201329109

[21] Y.C. Chen, H.C. Yu, C.Y. Huang, W.L. Chung, S.L. Wu, Y.K. Su, Nonvolatile bio-memristor fabricated with egg albumen film, Sci. Rep. 5 (2015) 1–12.

DOI: 10.1038/srep10022

[22] H. Wang, B. Zhu, H. Wang, X. Ma, Y. Hao, X. Chen, Ultra-Lightweight Resistive Switching Memory Devices Based on Silk Fibroin, Small. 12 (2016) 3360–3365.

DOI: 10.1002/smll.201600893

[23] X. He, J. Zhang, W. Wang, W. Xuan, X. Wang, Q. Zhang, C.G. Smith, J. Luo, Transient Resistive Switching Devices Made from Egg Albumen Dielectrics and Dissolvable Electrodes, ACS Appl. Mater. Interfaces. 8 (2016) 10954–10960.

DOI: 10.1021/acsami.5b10414

[24] Y. Zeng, B. Sun, H.Y. Yu, X. Wang, H. Peng, Y. Chen, S. Zhu, S. Mao, W. Hou, A sustainable biomemristive memory device based on natural collagen, Mater. Today Chem. 13 (2019) 18–24.

DOI: 10.1016/j.mtchem.2019.04.008

[25] B. Guo, B. Sun, W. Hou, Y. Chen, S. Zhu, S. Mao, L. Zheng, M. Lei, B. Li, G. Fu, A sustainable resistive switching memory device based on organic keratin extracted from hair, RSC Adv. 9 (2019) 12436–12440.

DOI: 10.1039/c8ra10643f

[26] A. Moudgil, N. Kalyani, G. Sinsinbar, S. Das, P. Mishra, S-Layer Protein for Resistive Switching and Flexible Nonvolatile Memory Device, ACS Appl. Mater. Interfaces. 10 (2018) 4866–4873.

DOI: 10.1021/acsami.7b15062

[27] B. Sun, X. Zhang, G. Zhou, P. Li, Y. Zhang, H. Wang, Y. Xia, Y. Zhao, An organic nonvolatile resistive switching memory device fabricated with natural pectin from fruit peel, Org. Electron. 42 (2017) 181–186.

DOI: 10.1016/j.orgel.2016.12.037

[28] A. Cifarelli, A. Parisini, T. Berzina, S. Iannotta, Organic memristive element with Chitosan as solid polyelectrolyte, Microelectron. Eng. 193 (2018) 65–70.

DOI: 10.1016/j.mee.2018.02.024

[29] X. Wang, S. Tian, B. Sun, X. Li, B. Guo, Y. Zeng, B. Li, W. Luo, From natural biomaterials to environment-friendly and sustainable nonvolatile memory device, Chem. Phys. 513 (2018) 7–12.

DOI: 10.1016/j.chemphys.2018.06.013

[30] B. Sun, S. Zhu, S. Mao, P. Zheng, Y. Xia, F. Yang, M. Lei, Y. Zhao, From dead leaves to sustainable organic resistive switching memory, J. Colloid Interface Sci. 513 (2018) 774–778.

DOI: 10.1016/j.jcis.2017.12.007

[31] K.M. Tran, D.P. Do, K.H. Ta Thi, N.K. Pham, Influence of top electrode on resistive switching effect of chitosan thin films, J. Mater. Res. 34 (2019) 3899–3906.

DOI: 10.1557/jmr.2019.353

[32] S.P. Park, Y.J. Tak, H.J. Kim, J.H. Lee, H. Yoo, H.J. Kim, Analysis of the Bipolar Resistive Switching Behavior of a Biocompatible Glucose Film for Resistive Random Access Memory, Adv. Mater. 30 (2018) 1–8.

DOI: 10.1002/adma.201800722

[33] J. Xu, X. Zhao, Z. Wang, H. Xu, J. Hu, J. Ma, Y. Liu, Biodegradable Natural Pectin-Based Flexible Multilevel Resistive Switching Memory for Transient Electronics, Small. 15 (2019) 2–9.

DOI: 10.1002/smll.201803970

[34] X. Xing, M. Chen, Y. Gong, Z. Lv, S.T. Han, Y. Zhou, Building memory devices from biocomposite electronic materials, Sci. Technol. Adv. Mater. 21 (2020) 100–121.

DOI: 10.1080/14686996.2020.1725395

[35] Y. Park, J.S. Lee, Flexible Multistate Data Storage Devices Fabricated Using Natural Lignin at Room Temperature, ACS Appl. Mater. Interfaces. 9 (2017) 6207–6212.

DOI: 10.1021/acsami.6b14566

[36] S. Mao, B. Sun, T. Yu, W. Mao, S. Zhu, Y. Ni, H. Wang, Y. Zhao, Y. Chen, PH-Modulated memristive behavior based on an edible garlic-constructed bio-electronic device, New J. Chem. 43 (2019) 9634–9640.

DOI: 10.1039/c9nj02433f

[37] Z.X. Lim, K.Y. Cheong, Effects of drying temperature and ethanol concentration on bipolar switching characteristics of natural Aloe vera-based memory devices, Phys. Chem. Chem. Phys. 17 (2015) 26833–26853.

DOI: 10.1039/c5cp04622j