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HomeSolid State PhenomenaSolid State Phenomena Vol. 55Temperature-Dependent Behaviour of Chalcogenide...

Temperature-Dependent Behaviour of Chalcogenide Thin Film Contacts on Porous Silicon

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Semiconductor Materials and Technology (ICSMT)

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Periodical:

Solid State Phenomena (Volume 55)

Pages:

77-79

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.55.77

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Online since:

August 1997

Authors:

S. Chakrabarti, S. Dhar

Keywords:

Current-Voltage Characteristic, Porous Silicon (PS), Schottky Barrier

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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