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The SEM images were obtained in the backscattering electron mode, whose main mechanism of contrast is related to differences in average atomic number between the phases present.
It could be observed a grains (CH) and dark regions that define the presence of b phase (BCC) along the grain boundaries of the alloy.
Ti-6Al-4V PIII treated micrograph (Figure 3b) shows similar structure than untreated alloy with thin structure and small grains.

Consequently, after cooling the system at end of the sintering process both factors: the poor adhesion of the cBN grain and the porosity due to the evolution of gas N2, impair the composite mechanical resistance.
This can be explained by the fact that under rapid cooling at high pressure causes the decrease of grain size during the crystallization of the matrix material.
The result of this effect is that the grain of cBN has better adhesion with the matrix material, which leads to increased hardness and, consequently, reduces the damage.
The sample obtained with low p, T - parameters showed a greater number of small holes in the ground surface.

The carbide was distributed relatively equally on the austenite grain boundary(Fig.1a).
Fig.1b shows a large number of cuboidal γ´ phase in the grain interior, and the average size of γ´ was about 50-60nm.
The grains of GH586 superalloy would become coarse and the numberof γ´ phase would shrink at high temperature [5], which will result in a worse mechanical property of this superalloy.

Moreover, FESEM images showed that there were a number of fine platelet grain (average thickness<1um) consisted of TiB2 and TiB in the joint zone closed to the ceramic substrate.
Even in the area of 0.2 ~ 0.3mm away from the ceramic substrate, TiB submicron-grain/micro-nano-grain structure appeared, as shown in Fig. 6.

Results and dicussion Varies thickness of CsCl film can be gotten by depositing the CsCl layer on surface of wafer in high vacuum system (0.01Pa), and reorganized into arrays of CsCl nano islands during the developing process to firstly form small grains and then became lager and lager gradually by the reassemble of small grains together with the principle of lowest surface energy.
The different sizes of CsCl nano islands can be made by controlling the reassemble of CsCl small grains with its coverage ratio above 35% for the fabrication of emmiter pins, and has been reported in previous papers [9,12].
Acknowledgments This work is supported by the National Science Foundation of China with contract number of 50972144.

Drift mobility in samples has been determined by using the formula µd= 1n e ρ (3) The carrier concentration ‘n’ is given by the relation n=NρmPFe M (4) where is A=Avogadro‘s number, ρm=measured density, PFe=Fe atoms, M=Molecular mass. 
One layer is of conducting Fe ions in the form of grain.
This layer is surrounded by layer of grain boundaries which is made up of poorly conducting substance.
These grain boundaries are active at lower frequency so e- hopping among Fe+2 & Fe+3 is less at lower frequency which resulted in increased conductivity with increase in frequency [6]. 

Usually, the materials, whose grain sizes are less than the critical size for the single-domain state (Dc), are classified as the nanocrystalline materials.
The Dc magnitude is determined by fundamental characteristics of specific phases and a number of other factors.
Experimental Coarse-grained powders of the SrFe12O19 strontium ferrite and Fe-Co-O system alloys were used as the initial materials in the present investigation.
Remanence of ultrafine-grained magnetics, Izd.

Their results indicated that the improvement of the SCC resistance of AISI 304 stainless steel was caused by compressive residual stress and grain refinement during LSP process, and the electrochemical corrosion resistance of AISI 304 stainless steel weldment improves with the increase of the LSP impact number.
Grain refinement and compressive residual stress, which produced in the laser shock peening process, may be the main reason for the decrease of the SCC susceptibility [9].
Grain refinement and compressive residual stress produced in the laser shock peening process may be the main reason for the increase of the SCC resistance.

Burning zone is from bottom of single-perforated grain, the megathermal and hyperbaric product will flow through vent and then lead to burning all of the chemical compositions from vent to direction of cartridge case 2.
From test we can see that the times of burning arc persisting in specimen will be decreased with CuO+Al, there will appear imperfect combustion of the chemical compositions or blow off the nozzle .There are two reasons for the problem: CuO+Al reaction can easily release oxygen so as to improve combustion speed; the internal structure of grain is hollow and nozzle relatively much smaller than diameter of the cartridge so that the expands gas which was heated difficult to smoothly discharge increase the internal pressure of internal cutting ammunition, and then savings pressure will increase mass flow rate within the grain so as to accelerate the reaction rate[3].
The main reason is as follow while the mass of KNO3 within the defined value: Resolving the potassium nitrate need absorb heat so as to reduce the combustion temperature, thereby reducing the velocity of the reactant molecules and the number of total collisions molecular which will reduce the speed of combustion; The lower temperature the lower activated molecules, leading to the slow burning velocity.

It means that the number of sputtered particles that arrive at the substrate decreases at higher pAr, reducing the deposition rate.
The average grain size calculated by Scherrer method [9] is approximately 30 nm for the films deposited at the lowest pressure.
With the argon pressure increase, the average grain size decreases.
Therefore, the grain size decreases with the increase of the argon pressure [5].