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The Osaka East Urban Area (which includes the cities of Higashi Osaka, Yao and Daito, etc.) is one of the most important centers of the machining and metalworking industries in Japan and boasts a number of leading Japanese manufacturers who possess high-level technological capabilities, as shown in Fig. 1.
From the result of this investigation, a friction stir processing of cast Mg-Y-Zn alloy was conducted, and a new production way of high strength alloys with fine grains, as shown in Fig. 6 and 7, were proposed [6, 7].
� � Fig. 4 Examples of two dimensional and three dimensional control of FSW FSW of Ti alloy � front & back views of Ti joint Fig. 5 FSW of titanium alloy Fig. 6 Friction stir processing of cast Mg97Y2Zn1 alloy (a) before FSP (TEM) (b) after FSP (TEM) (c) before FSP (FESEM) (d) after FSP (FESEM) Fig. 7 Fine grains developed by FSP of Mg97Y2Zn1 alloy Summary This year is the last year for this project.

By controlling various processing parameters, such as n(Fe3+)/n(Ba2+) ratio and n(OH-)/n(NO3-) ratio, a number of barium ferrite powders have been successfully prepared.
Researching the magnetic properties of barium ferrite, we found that the saturation magnetization and permeability were related to the grain morphology and grain size.

In the patent [12] describes a method of obtaining fine-grained powder polyaryletherketone.
Polyaryletherketone particles with a specific surface of 50 m2/g and an average diameter of grains of 500 µm is milled with the use of working cryogenic pin mill.
Based on this, the development of a simplified and cost - effective due to a smaller number of components used for the production of encapsulated aromatic polyether ether and copolyestereketons spherical shape is an urgent problem.

Orthogonal experiment results Factor Number temperature (°C) pressure (Pa) flow (sccm) experimental result dep rate (nm/min) stress (MPa) 1 220 60 80 27 -46 2 220 80 120 34 -35.1 3 220 100 160 41.6 20.4 4 250 60 120 26.6 -10.6 5 250 80 160 38 -21 6 250 100 80 40.4 -26 7 280 60 160 25.3 18 8 280 80 80 33 49.3 9 280 100 120 42 67 deposition rate Ⅰ 34.2 26.3 33.467 Ⅱ 35.00 35.00 34.20 Ⅲ 33.433 41.333 34.967 range 1.567 15.033 1.500 stress Ⅰ -20.233 -12.867 9.767 Ⅱ -1.867 -2.267 7.100 Ⅲ 44.767 37.800 5.800 range 65.000 50.667 3.967 Table 2 shows stress increases with increasing of temperature, stress continuously changed into tensile, Stress increases with increasing of pressure, reduce with the increasing of gas flow.
Under these conditions, the larger grains may grow at the expense of the smaller grains [3].

High cooling rate decreases grain size, shrinkage porosity, and causes more uniform distribution of porosity.
Segregation between dendrites and grain boundaries decreases with increasing cooling rate [2, 3] .In addition, to heat treatment and alloying elements, higher cooling rates have strongly affected the mechanical properties and microstructure of near eutectic Al–Si [4].
Acknowledgements This research is funded by Fundamental Research Grant Scheme (FRGS), vot number 1422, Ministry of Education.

A field experiment was conducted to study the key factors on the success of this method such as effects of the number of tampings and the number of passes.
Existing experience has shown that the key parameters for the successful application of this method are the number of hammer drops (tamping) at a point, number of passes and a properly designed drainage system[3-5].
The dynamic process included the total energy to be applied at each point, the number of hammer drops (tamping) at a point for a pass, the spacing of the points and the number of passes.
Based on past experience[6] ,more efficient treatment can be reached for a given total applied energy by decreasing the number of tamping by the drop of hammer and increasing the number of passes with practical limits.
Therefore it is beneficial to increase the number of passes with corresponding decrease in the number of tampings at a point.

As the electric field increased, the numbers of beads and droplet decreased.
Experimental Various concentrations of PVA powder were dissolved in deionized water and then stirred at 80°C for 24h to prepare PVA solutions. 1 % (w/v) means that 1g of PVA grains was dissolved in 100 ml of deionized water (solvent).
However, at distances of over 14 cm, the beads and droplets reduced the uniformity of the membrane (Fig. 4 (c), (d)) At long distances (over 14cm), as the distance increased, the number of beads and droplets increased.
Furthermore, the absorption peak at approximately 3340 cm-1, associated with the -OH and -NH stretching vibrations, shifted to a lower wave number as the PVA content in the blends increased.

When the seed adsorption disk rotates in operation procedure, it passes by the seed charging area and adsorbs certain seed through suction hole on the disk. and each suction hole will retain a single grain of seed by means of seed scraper scrape ring off the superfluous seeds[3-5].The seed adsorption effectiveness of the pneumatic seed metering device comes out differently due to the suction hole differs in shape and size.
Then the air pressure value at each suction hole is measured three times. and the average value at each suction hole might be obtained, after that, the probe of hot bulb anemometer is placed vertically against coming airflow at the inlet opening of the suction hole and the wind speed at each inlet opening is measured three times and the average value of wind speed at each inlet opening is obtained[9].The air pressure values at outlet opening and the wind speed at inlet opening of those suction holes at which the rate of single grain seed adsorbed reaches higher than 80% are recorded for analysis in table1[10].
Table 1.Result of determination of boundary conditions at suction holes Suction hole diameter [mm] Number of suction hole Seed to be tested Wind speed at inlet opening [m/s] Relative air pressure at outlet opening [Pa] Single grain rate 3.2 4 sunflower 0.41 -2000 88.3% 4.2 4 Small corn 0.53 -2000 86.7% 5.0 6 Soybean 2.08 -2000 83.3% The conditions for analysis Judgments of flow field type.
The fluid type is judged by Reynolds number, the formula is as follows: （1） Where, ρ-gas density, μ-dynamic viscosity, v-average flow speed, D-suction hole diameter.
The calculation result gives that the minimum Reynolds number is Re=36150, So the air-flow at suction hole is judged to be turbulence.

It should be noted that however general Equations (1)-(3) have been successfully used for interpretation of the results of marker experiments in a number of systems [10,15], a separate and very important problem constitutes the application of marker method in the case of highly disordered compounds.
However, to assure the uniform distribution of the point defects in both monosulphides, specimens have been homogenized for the succeeding 24 hours, for a number of different sulphur vapour pressures and temperatures in order to get a different point defect concentration in homogenized specimens.
Results and discussion A number of transition metal sulphides and oxides show very high deviations from stoichiometry.
First of all, the formation of thicker inner layer of NiS2 beneath the markers may be the result of small participation of inward diffusion of sulphur through point defects or grain boundaries of the reaction product.
This conclusion can be a priori ruled out, because the NiS2 product is coarse-grained and the sulphidation experiments carried out with the use of radioactive sulphur isotope 35S have demonstrated [21,22], that the inward grain-boundary and lattice diffusion of sulphur does not participate in the formation of the sulphide scale on nickel.

Free Carrier Concentration Spectroscopy FCCS is a graphical peak analysis method for determining the densities and energy levels of several dopant species without any assumption regarding dopant species, while the number of dopant species should be assumed beforehand in the case of a least-squares fit of the charge neutrality equation to )(Tp [4,5].
The number of grains in each sample was 5 to 7, and the grain size in each wafer was similar.
In the figure, the relationship between the sample number and the wafer position is indicated.
The grain sizes in the wafers near the bottom are similar to those in the wafers near the top.
Sample Number B2 C1 T3 T2 T1 �NA [×10 16 cm -3 ] 0.336 NA1 [×10 16 cm -3 ] 2.16 a) 1.51 a) 1.12 1 st acceptor �EA1 [meV] 40.3 a) 38.4 a) 45.9 1.09 b) 1.45 b) NA2 [×10 16 cm -3 ] 0.602 0.490 2 nd acceptor �EA2 [meV] 80.7 82.8 NA3 [×10 16 cm -3 ] 0.299 3 rd acceptor �EA3 [meV] 129.0 NA4 [×10 16 cm -3 ] 0.0981 0.0720 4 th acceptor � EA4 [meV] 188.1 188.8 determine AN∆ , 1AN and 1AE∆ .