Dependence of Hole Concentration in p-Type Silicon Solar Cell Wafers on Temperature and on Position within the Polycrystalline Ingot

Hideharu Matsuura; T. Ishida; K. Nishikawa; N. Fukunaga; T. Kuroda

doi:10.4028/www.scientific.net/SSP.93.141

Paper Titles

Correlation between Microstructure and Electronic Property of Solar-Grade Poly-Si Thin-Films Deposited on Textured Substrates
p.115

Low-Temperature Epitaxy on Polycrystalline Silicon Substrates
p.121

Cu(In,Ga)Se₂ Solar Cells on Flexible Stainless-Steel Foils
p.127

Cathodoluminescence Studies of Cu(In,Ga)Se₂ Thin-Films
p.133

Dependence of Hole Concentration in p-Type Silicon Solar Cell Wafers on Temperature and on Position within the Polycrystalline Ingot
p.141

Light-Induced Lifetime Degradation of Multicrystalline Silicon Wafers and Solar Cells
p.147

A Study on Impurities in Poly-Si Wafers Obtained from Vacuum Casting and their Effect on Solar Cell Efficiency
p.153

Defects in Polycrystalline Silicon Thin-Films Crystallized by Solid Phase and Excimer Laser Annealing
p.161

Optical and Electronic Properties of Laser Crystallized Poly-Si
p.167

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Dependence of Hole Concentration in p-Type Silicon Solar Cell Wafers on Temperature and on Position within the Polycrystalline Ingot

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Solid State Phenomena (Volume 93)

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141-146

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.93.141

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Online since:

June 2003

Authors:

Hideharu Matsuura, T. Ishida, K. Nishikawa, N. Fukunaga, T. Kuroda

Keywords:

Impurity, Polycrystalline Silicon Ingot, Solar Cell, Temperature Dependent Hole Concentration

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References

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