Dependence of Hole Concentration in p-Type Silicon Solar Cell Wafers on Temperature and on Position within the Polycrystalline Ingot

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Periodical:

Solid State Phenomena (Volume 93)

Edited by:

T. Fuyuki, T. Sameshima, H.P. Strunk and J.H. Werner

Pages:

141-146

DOI:

10.4028/www.scientific.net/SSP.93.141

Citation:

H. Matsuura et al., "Dependence of Hole Concentration in p-Type Silicon Solar Cell Wafers on Temperature and on Position within the Polycrystalline Ingot ", Solid State Phenomena, Vol. 93, pp. 141-146, 2003

Online since:

June 2003

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$35.00

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