Paper Titles

Dependence of Hole Concentration in p-Type Silicon Solar Cell Wafers on Temperature and on Position within the Polycrystalline Ingot
p.141

Light-Induced Lifetime Degradation of Multicrystalline Silicon Wafers and Solar Cells
p.147

A Study on Impurities in Poly-Si Wafers Obtained from Vacuum Casting and their Effect on Solar Cell Efficiency
p.153

Defects in Polycrystalline Silicon Thin-Films Crystallized by Solid Phase and Excimer Laser Annealing
p.161

Optical and Electronic Properties of Laser Crystallized Poly-Si
p.167

Tailoring Texture in Laser Crystallization of Silicon Thin-Films on Glass
p.173

Lateral Crystalline Grain Growth by Combination of Laser Irradiation with Rapid Substrate Heating
p.179

New Method to Form High-Quality Poly-Si Film by Selectively Enlarging Laser Crystallization
p.185

Hydrogen Bonding and Grain-Boundary Defects in Laser Crystallized Poly-Si
p.191

HomeSolid State PhenomenaSolid State Phenomena Vol. 93Optical and Electronic Properties of Laser...

Optical and Electronic Properties of Laser Crystallized Poly-Si

Article Preview

Abstract:

You might also be interested in these eBooks

Polycrystalline Semiconductors VII

Info:

Periodical:

Solid State Phenomena (Volume 93)

Pages:

167-172

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.93.167

Citation:

Cite this paper

Online since:

June 2003

Authors:

K. Brendel, N.H. Nickel

Keywords:

Electron Paramagnetic Resonance (EPR), Grain Boundary Defects, Hydrogen Passivation, Photoluminescence (PL), Polycrystalline Silicon

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2003 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: