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Lateral Crystalline Grain Growth by Combination of Laser Irradiation with Rapid Substrate Heating
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New Method to Form High-Quality Poly-Si Film by Selectively Enlarging Laser Crystallization
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Hydrogen Bonding and Grain-Boundary Defects in Laser Crystallized Poly-Si
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Super-Grain Poly-Si by Metal Induced Crystallization of Amorphous Silicon
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Metal-Induced Lateral Crystallization of Amorphous Silicon under Reduced Nickel Supply
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Structural Properties of Nickel-Metal-Induced Laterally Crystallized Silicon Films
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HomeSolid State PhenomenaSolid State Phenomena Vol. 93Hydrogen Bonding and Grain-Boundary Defects in...

Hydrogen Bonding and Grain-Boundary Defects in Laser Crystallized Poly-Si

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Polycrystalline Semiconductors VII

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Periodical:

Solid State Phenomena (Volume 93)

Pages:

191-198

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.93.191

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Online since:

June 2003

Authors:

N.H. Nickel, K. Brendel

Keywords:

Hydrogen Bonding, Hydrogen Density-of-State, Laser Crystallization, Paramagnetic Resonance, Polycrystalline Silicon

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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