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HomeSolid State PhenomenaSolid State Phenomena Vol. 93Structural Properties of Nickel-Metal-Induced...

Structural Properties of Nickel-Metal-Induced Laterally Crystallized Silicon Films

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Polycrystalline Semiconductors VII

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Periodical:

Solid State Phenomena (Volume 93)

Pages:

213-218

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.93.213

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Online since:

June 2003

Authors:

Mitsutoshi Miyasaka, Kenji Makihira, Tanemasa Asano, Béla Pécz, J. Stoemenos

Keywords:

Lateral Growth, Metal-Induced Crystallization, Needle-Like Crystals, Polycrystalline Silicon

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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[1] C. Hayzelden and J. L. Batstone, J. Appl. Phys. 73, 8279 (1993).

[2] Z. Jin, G. A. Bhat, M. Yeung, H. S. Kwok and M. Wong, J. Appl. Phys. 84, 194 (1998).

[3] L. K. Lam, S. Chen and D.G. Ast, Appl. Phys. Lett. 74, 1866 (1999).

[4] J. Jang, S. J. Park, K. H. Kim, B. R. Cho, W. K. Kwak and S. Y. Yoon, J. Appl. Phys. 88, 3099 (2000).

[5] Z. Jin, K. Moulding, H. S. Kwok and M. Wong, IEEE Trans. Electron Devices 46, 78 (1999).

[6] S. Y. Yoon, S. J. Park, K. H. Kim, J. Jang and C. O. Kim, J. Appl. Phys. 87, 609 (2000).

[7] D. Murley, N. Young, M. Trainor and D. McCulloch: Dig. of Tech. Papers 2000 Int. Workshop on Active-Matrix Liquid-Crystal Displays (2000 Tokyo), p.29. Ni Pad Crystallized-Si Fig. 5. Growth model of nickel-induced needle-like crystallite. Lately crystallized part NiSi2

[111] Growth

[8] M. Miyasaka, K. Makihira, T. Asano, E. Polychroniadis and J. Stoemenos, Appl. Phys. Lett. 80, 944 (2002).

DOI: 10.1063/1.1447014

[9] C. H. Chu, Y. M. Lu and M. H. Hon: J. Mat. Sci. 27, 3883 (1992).

[10] R. Drosd and J. Washburn: J. Appl. Phys. 53, 397 (1982).

[11] M. Miyasaka and J. Stoemenos: J. Appl. Phys. 86, 5556 (1999).