Paper Titles

Metal-Induced Lateral Crystallization of Amorphous Silicon under Reduced Nickel Supply
p.207

Structural Properties of Nickel-Metal-Induced Laterally Crystallized Silicon Films
p.213

High-Temperature Crystallization of Amorphous Silicon on a Molybdenum Substrate
p.219

Rapid Joule Heating with Metal Films Used to Crystallize Silicon Films
p.225

Low-Temperature Crystallization of Poly-SiGe Thin-Films by Solid Phase Crystallization
p.231

Influence of Thermal Electron Irradiation on Crystallization of a Growing Si Film on a Glass Substrate
p.237

Solution Growth of Polycrystalline Silicon on Quartz Glass Substrates
p.243

Crystal Structure Analysis of Spherical Silicon Using X-Ray Pole Figures
p.249

Microcrystalline Silicon Thin-Films Grown by Plasma Enhanced Chemical Vapour Deposition - Growth Mechanisms and Grain Size Control
p.257

HomeSolid State PhenomenaSolid State Phenomena Vol. 93Low-Temperature Crystallization of Poly-SiGe...

Low-Temperature Crystallization of Poly-SiGe Thin-Films by Solid Phase Crystallization

Article Preview

Abstract:

You might also be interested in these eBooks

Polycrystalline Semiconductors VII

Info:

Periodical:

Solid State Phenomena (Volume 93)

Pages:

231-236

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.93.231

Citation:

Cite this paper

Online since:

June 2003

Authors:

Kouichi Nakahata, M. Isomura, K. Wakisaka

Keywords:

Amorphous Germanium Seed Layer, Hydrogen Treatment, Silicon Germanium, Solid Phase Crystallization

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2003 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] T. Baba, M. Shima, T. Matsuyama, S. Tsuge, K. Wakisaka and S. Tsuda, Tech. Digest of 13th EU-PVSEC, 1708 (1995)

[2] C. W. Hwang, M. K. Ryu, K. B. Kim, S. C. Lee and C. S. Kim, J. Appl. Phys. 77, 3042 (1995)

[3] T. Sameshima and S. Usui, Mat. Res. Soc. Symp. Proc. 258, 117 (1992)