Influence of Thermal Electron Irradiation on Crystallization of a Growing Si Film on a Glass Substrate

Susumu Horita; Seiji Miyoshi; Osamu Jaike

doi:10.4028/www.scientific.net/SSP.93.237

Paper Titles

Structural Properties of Nickel-Metal-Induced Laterally Crystallized Silicon Films
p.213

High-Temperature Crystallization of Amorphous Silicon on a Molybdenum Substrate
p.219

Rapid Joule Heating with Metal Films Used to Crystallize Silicon Films
p.225

Low-Temperature Crystallization of Poly-SiGe Thin-Films by Solid Phase Crystallization
p.231

Influence of Thermal Electron Irradiation on Crystallization of a Growing Si Film on a Glass Substrate
p.237

Solution Growth of Polycrystalline Silicon on Quartz Glass Substrates
p.243

Crystal Structure Analysis of Spherical Silicon Using X-Ray Pole Figures
p.249

Microcrystalline Silicon Thin-Films Grown by Plasma Enhanced Chemical Vapour Deposition - Growth Mechanisms and Grain Size Control
p.257

Self-Limiting Formation and Optical Properties of Hemispherical Grains of Microcrystalline Silicon on an Amorphous Silicon Film Surface
p.269

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Influence of Thermal Electron Irradiation on Crystallization of a Growing Si Film on a Glass Substrate

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Solid State Phenomena (Volume 93)

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237-242

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https://doi.org/10.4028/www.scientific.net/SSP.93.237

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Online since:

June 2003

Authors:

Susumu Horita, Seiji Miyoshi, Osamu Jaike

Keywords:

Crystallization, Glass Substrate, Polycrystalline Silicon, Thermal Electron Irradiation

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