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Defects in Polycrystalline Silicon Thin-Films Crystallized by Solid Phase and Excimer Laser Annealing
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Optical and Electronic Properties of Laser Crystallized Poly-Si
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Tailoring Texture in Laser Crystallization of Silicon Thin-Films on Glass
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Lateral Crystalline Grain Growth by Combination of Laser Irradiation with Rapid Substrate Heating
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New Method to Form High-Quality Poly-Si Film by Selectively Enlarging Laser Crystallization
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Hydrogen Bonding and Grain-Boundary Defects in Laser Crystallized Poly-Si
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Super-Grain Poly-Si by Metal Induced Crystallization of Amorphous Silicon
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Metal-Induced Lateral Crystallization of Amorphous Silicon under Reduced Nickel Supply
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Structural Properties of Nickel-Metal-Induced Laterally Crystallized Silicon Films
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HomeSolid State PhenomenaSolid State Phenomena Vol. 93New Method to Form High-Quality Poly-Si Film by...

New Method to Form High-Quality Poly-Si Film by Selectively Enlarging Laser Crystallization

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Polycrystalline Semiconductors VII

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Periodical:

Solid State Phenomena (Volume 93)

Pages:

185-190

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.93.185

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Online since:

June 2003

Authors:

Mitsuharu Tai, Mutsuko Hatano, Shinya Yamaguchi, Seong Kee Park, Takeshi Noda, Mikio Hongo, Takeo Shiba, Makoto Ohkura

Keywords:

Laser Crystallization, Polycrystalline Silicon, Pulsed Laser, Selectively Enlarging Laser Crystallization, Thin Film Transistor

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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