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Chemical Kinetic Studies on Polyurethane Formation of GAP and HTPB with IPDI by Using In-Situ FT-IR Spectroscopy Abbas Tanver*, Mu-Hua Huang, LUO Yun-jun, Zehuan Hei （School of Materials and Engineering Science, Beijing Institute of Technology, Beijing, 100081, China) For correspondence: tanvermughal@gmail.com Key words: In-Situ FT-IR; glycidyl azide polymer (GAP); hydroxyl terminated poly butadiene (HTPB); chemical kinetics; polyurethane; dibutyl tin dilurate (DBTDL).
Experimental: Materials Characteristics: Glycidyl azide polymer (GAP) having molecular weight and hydroxyl contents 3700 g mol-1 and 29.15 mg KOH g-1 respectively, Nitrogen contents, water contents and functionality are 41.3 %, 0.217 % and 1.92 respectively.
Chinese Journal of Energetic Materials, 2011, 19(3): 291-294
Journal of Applied Polymer Science, 2008, Vol. 110, 908–914
Wen Qing Zhen.; Zou Chao.; Zhu Jinhua, FT-IR Study of polyurethane curing behavior [J] Polymer Materials Science and Engineering, 2003, 19 (1): 108-111

Therefore, the development of good materials for modifying ZnO/TiO2 is urgently needed to increase the photocatalytic activity.
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Effects of Different Gloss Firing Temperature on the Crystallization of Zinc-based Crystal Glaze ABDUL RASHID JAMALUDIN1, a, SHAH RIZAL KASIM1, b, ZAINAL ARIFIN AHMAD1, c 1School of Materials and Mineral Resources, Engineering Campus, Universiti Sains Malaysia, 14300 Nibong Tebal, Pulau Pinang, Malaysia.
Materials were classified as bases (RO/R2O), amphoterics (R2O3) and acids (RO2) as required in the empirical glaze formula and were mixed according to the calculated formula.
Journal of Microscopy, Vol. 215, Pt 3 September 2004 p. 257 [4] B.
The Journal of the European Ceramic Society, 22, (2002) p.1447
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Lieurade, Materials Science and Engineering A 210 (1996) 102
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The alloys are multi-functional materials, which have both the ferromagnetic property and shape memory property.
Introduction Considerable attentions have being given to materials called intelligent material.
Enokizono et al., Magnetic properties of iron-based ferromagnetic shape-memory ribbon produced by melt-spinning technique, Journal of Magnetism and Magnetic Materials, 304, pp. 516-518 (2006)
Enokizono, Magnetic properties of Fe-Cr-Mn-Si-Base ferromagnetic shape memory ribbons, Journal of Magnetism and Magnetic Materials, 310, pp. 2776-2778 (2007)
Kanada, Development of iron-based ferromagnetic shape memory alloys by means of melt spinning technique, Journal of Advanced Science, Vol. 18, pp. 70-73 (2006)

Finally, the electron localization function (ELF) is used to investigate the binding mechanism of interacting materials.
With these calculated values, it was clear that there was weak binding between the two materials.
Hafner, Ab‐initio simulations of materials using VASP: Density‐functional theory and beyond, Journal of computational chemistry, 29(13) (2008) 2044-2078
Rubiolo, Charge difference calculation in Fe/Fe3O4 interfaces from DFT results, Procedia Materials Science, 9 (2015) 612-618
Wentzcovitch, QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials, Journal of physics: Condensed matter, 21(39) (2009) 395502

The monodisperse spherical particles used as raw materials to prepare photonic crystal materials and multifunctional catalysts with core-shell structure have attracted wide attention and become the research hotspot in chemistry, physics, materials science, and many other disciplines and cross-cutting areas [5]. 
Experimental Materials and instrumentation.
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Journal of Colloid and Interface Science.

Magnetic application of superfine powder is mainly in the aspect of magnetic recording materials.
They can be used as permanent magnetic recording materials to improve the signal-to-noise ratio image performance.
Hu: China Powder Science and Technology, Vol. 8 (2002) No.1, p.1-2.
Pan: Solid State Sciences, Vol. 8 (2000), No.2, p.767- 772
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Eventually the ridges become well separated and thinner, seeing that the etchant consumes most of the materials.
Khan, "Transistors and detectors based on GaN-related materials," in Group III Nitrides Semiconductors Compounds, B.
Ahmed, "Structural and Surface Studies of Undoped Porous GaN Grown on Sapphire," Advanced Materials Research, vol. 620, pp. 45-49, 2013
Kwong, "Porous GaN for Gas Sensing Application " Advanced Materials Research, vol. 1043, pp. 50-56, 2014
Hassan, "A Novel AC Technique for High Quality Porous GaN," International Journal of Electrochemical Science, vol. 8, 2013