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Online since: September 2013
Authors: Qiang Li, Wei Wang
The output signal of the transducers was firstly sent to an charge amplifier which was set 40dB, and then sent to a high-speed A/D converter installed on the computer for data collecting at a sampling rate of 3MHz.
The amplitude is reduced from the first channel to the fourth channel, and the reduction between normal bearing and defective bearing at each channel is decreasing with the increase of the distance between the bearing and transducer.
In the test, we calculated these three features by six-cycle data picked up from the collected data.
The amplitude is reduced from the first channel to the fourth channel, and the reduction between normal bearing and defective bearing at each channel is decreasing with the increase of the distance between the bearing and transducer.
In the test, we calculated these three features by six-cycle data picked up from the collected data.
Online since: August 2013
Authors: Tian Chi Zhang, Jing Zhang, Dan Dan Han
System Architecture and Module Partition
Von Neumann architecture is adopted to build hardware systems and Altera's Avalon bus mode is used in this paper, Nios II completed data exchange with the outside world by Avalon bus.
SD card reset timing diagram PIO Interface Unit and EPCS Controller According to the type of I / O configuration options for the PIO port, due to the LCD is a double-side communication device, thus an 8-Bit Bidirectional port is need to use, PIO register configuration through the software program to control the direction of data transfer of the I / O port.
In the process of user operation of the keys on the screen, the mechanical jitter occurs within a certain period of time, when voltage signal generated by this jitter exceeds the threshold of digital logic, logic error is generated, making the system generated error response, and therefore need to write the screen key anti-shake image stabilization program, therefore need to write the screen button Shake Reduction program.
CPU module uses Overclocking Technology, so that the CPU can have better performance, in order to meet the higher data processing speed, timing-driven of SD card is optimized, SD card reading and writing speed has been improved.
SD card reset timing diagram PIO Interface Unit and EPCS Controller According to the type of I / O configuration options for the PIO port, due to the LCD is a double-side communication device, thus an 8-Bit Bidirectional port is need to use, PIO register configuration through the software program to control the direction of data transfer of the I / O port.
In the process of user operation of the keys on the screen, the mechanical jitter occurs within a certain period of time, when voltage signal generated by this jitter exceeds the threshold of digital logic, logic error is generated, making the system generated error response, and therefore need to write the screen key anti-shake image stabilization program, therefore need to write the screen button Shake Reduction program.
CPU module uses Overclocking Technology, so that the CPU can have better performance, in order to meet the higher data processing speed, timing-driven of SD card is optimized, SD card reading and writing speed has been improved.
Online since: August 2014
Authors: Fuh Kuo Chen, Shi Wei Wang, Heng Kuang Tsai
Although the use of lightweight metals such as aluminum alloy and magnesium alloy can achieve the purpose of weight reduction, the material cost seriously affects the market competition accordingly.
The stress and strain relations obtained from the finite element simulation results recur to those acquired from the experimental data very well.
It is seen in Fig. 3 that the consistency between the experimental data and the finite element results are noted in the tension portions.
The experimental data was also employed to determine the material constants used in the Yoshida-Uemori model and the finite element simulations of the cyclic tension-compression tests with the Y-U material constants re-produce the stress-strain curves quite consistent with those obtained from the experimental results.
The stress and strain relations obtained from the finite element simulation results recur to those acquired from the experimental data very well.
It is seen in Fig. 3 that the consistency between the experimental data and the finite element results are noted in the tension portions.
The experimental data was also employed to determine the material constants used in the Yoshida-Uemori model and the finite element simulations of the cyclic tension-compression tests with the Y-U material constants re-produce the stress-strain curves quite consistent with those obtained from the experimental results.
Online since: December 2011
Authors: Li Zhao, Fu Ju Zhang, Ke Jie Dai
Several unique advantages namely of narrow gap technology, high productivity and quantity, lower distortion, high cost-effectiveness and all position capability can be attributed to the reduction in the proportion of filler metal in the welded joints, which only depends on the size of the gap [1-3].
Property data of H610U steel.
High temperature, especially near the molten state, the thermal properties of the data is not readily available.
First, all pool parameters were obtained from experiment, and then the source model was checked using the data.
Property data of H610U steel.
High temperature, especially near the molten state, the thermal properties of the data is not readily available.
First, all pool parameters were obtained from experiment, and then the source model was checked using the data.
Online since: June 2013
Authors: Yan Hong Yang, Xiang Qiang Zhong
With forest resource reduction and environmental awareness, artificial plate arises.
Data structure for transmitting information between Pro/E and application program is not visible, and the function can only be provided by Pro/TOOLKIT to access, so using Pro/TOOLKIT toolbox to call itself with the function library, original software function is expanded.
Above all, Visual C++ 6.0 creates graphical user interface, it is associated with SQL Server 2000 database, and it operates and controls data source by use of ADO technology, the user can select or add data through the interface.
Data structure for transmitting information between Pro/E and application program is not visible, and the function can only be provided by Pro/TOOLKIT to access, so using Pro/TOOLKIT toolbox to call itself with the function library, original software function is expanded.
Above all, Visual C++ 6.0 creates graphical user interface, it is associated with SQL Server 2000 database, and it operates and controls data source by use of ADO technology, the user can select or add data through the interface.
Online since: June 2004
Authors: Mehran Mehregany, Christian A. Zorman, Srihari Rajgopal, J. Dunning, Xiao An Fu
Young's modulus
Lateral resonant devices (Fig. 2) were used to derive film modulus data.
The spread in the Young's modulus data is likely due to variations Journal Title and Volume Number (to be inserted by the publisher) 3 in beam dimensions within a particular device as a result of lateral variations in the lithographic patterning and SiC etching steps.
This curvature inhibits performance by causing any or all of the following: an electrical short since conductive device elements could touch the substrate, a decrease in electrostatic actuation capability due to reduction in overlap area or an increase in mechanical friction.
Devices were observed using SEM to confirm release and to obtain data such as direction and profile of out-of-plane deflection, beam take-off angle and beam length.
The spread in the Young's modulus data is likely due to variations Journal Title and Volume Number (to be inserted by the publisher) 3 in beam dimensions within a particular device as a result of lateral variations in the lithographic patterning and SiC etching steps.
This curvature inhibits performance by causing any or all of the following: an electrical short since conductive device elements could touch the substrate, a decrease in electrostatic actuation capability due to reduction in overlap area or an increase in mechanical friction.
Devices were observed using SEM to confirm release and to obtain data such as direction and profile of out-of-plane deflection, beam take-off angle and beam length.
Online since: August 2011
Authors: Ming Chen, Yu Wang, Jun Qing Gao, En Chen
It forces the sharing of interactions and data among functional members.
It is believed that the use of teardown data is very important to be able to analyze the materials content and structure of a vehicle in the early design stage [2].
The problem that needs to be addressed is that reduction of waste stream through the recovery and recycling of plastics.
One of the potential materials or part recovery routes is dismantling, where numerous attempts have been made to improve the process, including whole disassembly lines and analysis tools to assess optimum disassembly sequences using recovery cost and revenue data [5].
It is believed that the use of teardown data is very important to be able to analyze the materials content and structure of a vehicle in the early design stage [2].
The problem that needs to be addressed is that reduction of waste stream through the recovery and recycling of plastics.
One of the potential materials or part recovery routes is dismantling, where numerous attempts have been made to improve the process, including whole disassembly lines and analysis tools to assess optimum disassembly sequences using recovery cost and revenue data [5].
Online since: September 2007
Authors: José Millan, Narcis Mestres, Philippe Godignon, Amador Pérez-Tomás, Michael R. Jennings, James A. Covington, Philip Andrew Mawby
These gate biases correspond
to Fermi energies in which the interface trap density could be well established utilizing
conventional electrical methods.
100 150150 300 450 600 750
300 450 600 750
0.1
1
10
30
Experimental Data
Field-Effect Mobility, µµµµFE [cm2/Vs]
Temperature, T [K]
VG=12V
VG=9V
VG=6V
MODEL
1014
1015
1016
1017
1018
0.01
0.1
1
10
30
1014
1016
1018
0
4
8
12 Vth [V]
NA [cm-3
]
Scaled from Ref. [6]
Experimental Data
Field-Effect Mobility, µµµµFE [cm2/Vs]
Substrate Impurity Concentration, NA [cm-3]
VG=12V
VG=9V
VG=6V
MODEL
(a) (b)
Fig. 3.
Computed and experimental dependence of the field-effect mobility on (a) temperature (b) substrate impurity concentration (experimental data from Ref. [6] @ Vg=20V).
Hence, we find that a high density of traps provokes an additional considerable reduction in field-effect mobility when there is an increase in substrate doping.
Computed and experimental dependence of the field-effect mobility on (a) temperature (b) substrate impurity concentration (experimental data from Ref. [6] @ Vg=20V).
Hence, we find that a high density of traps provokes an additional considerable reduction in field-effect mobility when there is an increase in substrate doping.
Online since: October 2013
Authors: Qing Chun Wang, Wei Liang Dai, Xu Guang Li
Introduction
Nowadays with the increase of automotive ownership, crash safety, foul saving and exhaust reduction were becoming the most important areas for vehicle design.
Tests data included load and crosshead displacement were stored in the computer at a recording rate of one data point every 1 s.
Deformation modes of the stiffened single hat sections (Type II) Resistance force and displacement relationships.The axial resistance force and displacement relationships could be achieved from the data recorded.
Tests data included load and crosshead displacement were stored in the computer at a recording rate of one data point every 1 s.
Deformation modes of the stiffened single hat sections (Type II) Resistance force and displacement relationships.The axial resistance force and displacement relationships could be achieved from the data recorded.
Online since: September 2011
Authors: Gui Qin Li, Li Xin Lu, Guo Jun Jin, Yi Sun
It shows that with the reduction of electrode gap, the electric field and potential values were increasingly improved.
The comparison between experimental data and simulation results of nine samples is shown in Fig.7.
Table2 Process parameters H2:SiH4 (sccm) P(Pa) T (℃) 109:11 169:11 50:10 169:11 109:11 50:10 109:11 50:10 169:11 300 200 100 300 200 100 300 200 100 520 520 520 350 350 350 180 180 180 From Fig.7, it is concluded that the tolerance of the deposition rate between the experimental data and simulate results is less than ± 15%, that is, the experimental data and simulate results are in good agreement.
The comparison between experimental data and simulation results of nine samples is shown in Fig.7.
Table2 Process parameters H2:SiH4 (sccm) P(Pa) T (℃) 109:11 169:11 50:10 169:11 109:11 50:10 109:11 50:10 169:11 300 200 100 300 200 100 300 200 100 520 520 520 350 350 350 180 180 180 From Fig.7, it is concluded that the tolerance of the deposition rate between the experimental data and simulate results is less than ± 15%, that is, the experimental data and simulate results are in good agreement.