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The data allow the following conclusions to be made: Arcing Current Density (mA.cm-2) Fig. 1 Colours of film surfaces (0.3 M H3PO4 electrolyte) as a function of applied voltages and current densities
Microstructure (FESEM) Figure 2 shows FESEM images of the films as a function of the applied voltage, while Table 2 summarises the data in the figure.
These competing mechanisms may be responsible for the apparent non-linearity of the data in the region 30-70 V.
The current density data are not consistent in that the amount of anatase would be expected to be greater for the higher current density.
Conclusions The colours of the films result from (a) interference effects associated with the thicknesses at low voltages and (b) partial reduction of titania at high voltages.

Actually, the print-through caused by ink penetration is also due to opacity reduction in the printing area on paper [7].
Paper proofing and relevant data testing Because the alleviation of offset print-through could be achieved by properly decreasing printing pressure and increasing printing speed [5], thus 3 sets of printing condition were adapted, which was (625 N，0.4 m/s)、(725 N，0.3 m/s)、(825 N，0.2 m/s).
In Table 1, data variation among the three factors revealed this law.
Relationships between paper PTR value and print-through property Fig. 2 and Fig. 3 are built up according to the data from Table 1, Table 2.
Conclusions According to the above research, it can achieve some conclusions as follows. 1) Printing pressure, printing speed, different color ink and paper sample have some influences on the print-through value. 2) It is the first time to bring PTR value to predict print-through property for paper print, the prejudging model is built up, and the data show when PTR value is lower than 73%, the print-through problems will be more serious with the falling PTR.

Temperature field of cross-section was recorded by data container Agilent34970A at a constant rate of 10s/time.
All the measurements were automatically recorded by data container Agilent34970A.
Time(min) Displacement (mm) Fig. 9: Axial displacement curves of three frame structures Conclusions according to results and data were summarized as follows: 1) The law of displacement of three frame structures was consistent; the displacement of KJ2 was the largest among three frame structures, the displacement of KJ1 was larger than KJ3, mainly because of the stiffness of frame structure became smaller caused by the seismic damages. 2) The recovery ability of deformation with seismic damages was much worse than that of without seismic damages.
Fig. 10: (a) Photo of the cracks of beam after fire (b) Photo of the cracks of column after fire Conclusions The law of temperature field and bearing capacity of the frame structures with seismic damages according to analysis of the phenomenon and data was summarized as follows: 1) The law of frame structures temperature curve was greatly influenced by seismic damages.
Institute of Structure Engineering and Disaster Reduction at Tongji University, 1990.9.

Electronic band structure calculations have shown that SFs introduce a narrow energy band which splits from the conduction band minimum and extends into the bandgap of 4H-SiC [8,9]; this results in a reduction of excess carrier lifetimes [10], poor conductivity modulation [11], and a corequisite increase in forward voltage required to maintain constant levels of current.
The post-stress EL images were taken following a battery of electrical stress tests consisting of 10 minutes at 1 A/cm2, 5 minutes at 10 A/cm2, 5 minutes at 100 A/cm 2, and 2½ minutes at 1000 A/cm2; these tests were done systematically from lowest to highest injection level to maximize data collection in the case of premature and fatal structural degradation to the device under test.
Consistent with the absence of visible structural degradation, our Vf data (Fig. 3) showed no substantial drift at any of the injection levels.
Discussion The combination of the following facts leads us to believe that the expansion of SFs by the recombination-enhanced motion of dislocations-and the accompanying drift of forward voltage necessary to maintain a constant level of current-is not an issue for bipolar devices made from 3CSiC: (1) In comparing pre-stress and post-stress EL images at all current injection levels, none of the bright <110>-aligned linear features underwent any motion; (2) ECCI images revealed dislocation-type contrast behavior of the linear features, supporting the notion that these features are dislocations; and (3) accompanying Vf data on these devices showed no substantial drift, which follows the results reported by Neudeck et al. on the favorable electrical performance of defect-free 3C diodes [1].
Vf data for four levels of forward current.

Table 1.Original specification of the new optical disk Track pitch Shortest pit length (3T) Maximum data range 571 [nm] 332 [nm] 58.5[ mm] Figure 1 showed one expreriment carried out in our lab.
Liu, Superresolution technology for reduction of the far-field diffraction spot size in the laser free-space communication system: Opt.
O’Neill, Using pit-depth modulation to increase capacity and data transfer rate in optical discs: Proc.
Mansuripur, Measurement and simulations of differential phase-tracking signals in optical disk data storage: Appl.
[7] Christian Büchler, Method for position control in optical data carriers with address information, United States Patent, US 7,206,263 B2 (2007)

The Noise Reduction Coefficient (commonly abbreviated NRC) is a scalar representation of the amount of sound energy absorbed upon striking a particular surface.
Results and Discussion The data obtained in this experiment are given in the Table 1 as well as in the form of plots between the frequency (Hz) and sound absorption coefficients (α) in Fig. 2.
Frequency response function for both incident and reflected wave for this data are given in a form of sound pressure level (dB).
Calculations of the normal incident absorption coefficient for acoustical materials were performed by processing an array of complex data from the measured transfer function.
The data from incident and reflected component are used to determine sound absorption coefficient of tested material.

Formulas for calculating the quantities included in f. (1) Indicator Concrete Ordinary SCC Rτ Rτ= R28∙exp⁡(kτ(1-28τ)) kτ= 0,2 for fast hardening concrete; kτ= 0,25 for normal hardening concrete; kτ= 0,38 for slow hardening concrete Rt,τ Rt,τ=0,29∙Rτ0,6 ɛsh,τ ɛsh,τ= ɛ120∙exp⁡(kτ11-120τ0,545 ) kτ1= 0,11 for fast developing shrinkage; kτ1= 0,19 for normal developing shrinkage; kτ1= 0,27 for slow developing shrinkage E0,τ E0,τ=k2100057+0,04∙Rτ1+293,8+0,8∙Rτ k2= 1 – for ordinary concrete; k2=0,8…1,2 for SCC φτ φτ= 8000E0,τ0,785 φτ= 536E0,τ0,5 Using f. (1) taking into account the listed in tab. 1 data for concrete class С40/50 dependences for the value “k” = f (τ) and for the period “T”, during which the value “k” for different concrete reaches the value “k” = 1 were obtained.
The dependence of the value of “k” on the value of E0 ОС – ordinary concrete; NN – normal hardening concrete (kτ = 0,25) with normal shrink kinetics (kτ1 = 0,19); RR – quick-hardening concrete (kτ = 0,2) with fast-growing shrinkage (kτ1 = 0,11); 0,25…0,75 – shrinkage value ɛsh,120, mm/m Discussion It is obvious from the presented on fig. 1 data that the duration of the “T” period begins to increase significantly with a decrease in shrinkage values below a certain value.
Since the duration of the “T” period can be considered an indirect characteristic of crack resistance, it can be concluded that the key points in increasing the shrinkage crack resistance of the SCC are reduction of shrinkage deformations and the E-modulus of concrete.
Presented in fig. 2 data confirm the conclusion of the potentially higher crack resistance of the SCC.
The rate of hardening and kinetics of shrinkage deformations affect on crack resistance to a much lesser degree than the E-modulus and magnitude of shrinkage deformations, as is evident from the presented in fig. 3 data.

The pressure histories were collected and recorded by an internal circuit piezoelectric crystal pressure transducer (PCB 138M124), a sensor signal conditioner (PCB 482A16), and a data collecting instrument (JOVIAN 5200).The experiments were conducted in a Φ8 m×8 m rigid pool.
There is excessive oxygen in 4.6 MPa oxygen to burn all the reduction elements in TNT (without consideration of cab and booster) to their most highly oxidized products, but as shown in Table 2 that the afterburning energy released in 4.6 MPa oxygen (4.90 kJ·g－1) doesn’t reach the theoretical maximum value (10.4 kJ·g－1).
Reuslts show that the computations agree nicely with the experimental data—judged on the basis of initial peak pressure, waveforms and total impulse.
Comparison of pressure and impulse histories from numerical simulation with experimental data.
Bjarnholt, Suggestions on standards for measurement and data evaluation in the underwater explosion test, Propellants, Explos., Pyrotech. 5 (1980) 67-74

Borimsky [9] presented experimental data on a universal computational system capable to analyze several technological processes conducted in hydraulic presses with up to 5000 ton-capacity containing an anvil with central concavity type of HPD.
In the present work, it was analyzed the experimental data collected from direct and indirect measurements of operational parameters automatically controlled by the previously developed [10] programmable command.
Methodology The experimental analysis and data acquisition [12] was carried out in a 2500 ton press fabricated by Ryazantyazhpressmash in Russia.
- After the operational time is over, the electrical current is turned off and, following 30 s, the reduction in pressure procedure is initiated until the zero value is reached
Other information can be obtained from the acquisition of data depicted in Fig. 1 and 2

DSP engine, two 40 bits totalizer, the hardware to support division operation, barrel shifter, 17X17 bits multiplier, large 16 bits working register array and multiple data addressing mode support widely mathematical treatment to the central processing unit of DSPIC33 series.
Otherwise, the DM allows data transmission among many peripheral and special DMA RAM without CPU pending.
The data conversion rate is 6.25readings/s @50HZ and 7.5readings/s @60HZ of restraining mode.
Thermocouple voltage reduction will be transmitted by the ADC and MCU will convert the relative temperature.
Through the experimental data we can find out system measurement accuracy can reach less than ±0. 25 ℃.