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An increase in the productivity of these operations can have dramatic positive economic effect, especially if the alternative is to hire more staff or increase the number of machines in the production.
The number of pores per unit area was given accordingly to the British Standard ISO4505:1978.
As shown from the patterns, the presence of characteristics picks of WC phase at (41.634, 56.731and 36,759) degree (JCPDS: 01-072-0097) and TiC phase at (48.808, 41.932 and 71,508) degree (JCPDS: 03-065-7130) as major phases are clearly visible.
According to (JCPDS: 01-089-7093) card the peaks positions are found at (51,844 and 60,632) degree with a small offset of 0.1 to 0.2 degrees compared with obtained patterns, this decal can be explained by the small partially solubility of carbon, titanium and tungsten in the cobalt matrix.
The patterns show also the presence of free carbon under the form of graphite at (51,09 degree) (JCPDS: 00-026-1081) confirming the results of TGA and EDS.

It is seen that all the peaks match well with the standard JCPDS card No: 43-0973 as shown in Fig. 1(a).
XRD pattern of Bismuth Titanate powder (a) Reference JCPDS data file no 43-0973 (b) after combustion without calcinations and (c) after calcination at 800 °C SEM analysis.
A great number of agglomerates can be seen in the powder which is typical of combustion synthesis products [14].

All the reflections except GS (002) peaks could be indexed to CoxMn3-xO4 as a cubic spinel with space group Fd-3m (Joint Committee on Powder Diffraction Standards, JCPDS card no.84-0482).
The transferred electron number per oxygen molecule involved in the ORR process was determined by the Koutecky-Levich equation, 1/J = 1/JK + 1/Bω0.5, where J and JK were the measured and kinetic current densities, respectively[12].
The number of electrons transferred n and JK were obtained from the slope and the intercept of the Koutecky–Levich plots.
The electron transfer number (n) was calculated to be 3.85 at -0.45V from the slope of Koutecky-Levich Plots(Fig. 2c), and electron transfer number remained approximately constant over the potential range from -0.3V to -0.5V(inset of Fig. 2d), suggesting a four-electron process for the ORR on the SCMN@GS electrode in a wide potential range.

The large number of polarization directions enables optimized crystallographic orientations to be established from grain to grain in the poling process and, in turn, results in anomalously high piezoelectric properties [9].
Results and discussion XRD pattern for PZT powder samples (Fig. 1) permitted the identification of two perovskite phases through JCPDS data bank.
Then, it was performed a wide search in the ICSD structure data bank in order to initiating the Rietveld refinement with two phases in input files: Rhombohedral (R3mR - card number #77585) and tetragonal (P4mm - card number #90699).

The XRD test results of the Ni0.5Mn0.3Co0.2C2O4.2H2O (NMC532 precursor-oxalate) showed that the peak formed in the sample are almost similar to the reference nickel oxalate dihydrate or Joint Committee on Powder Diffraction Standards (JCPDS) card number. 25-0582 [8], while the slight difference can be attributed to the presence of Co and Mn atoms in the crystal structure [9].
All peaks formed in the test results were confirmed to the JCPDS 9-063 card[17].
While the cycle is the number of charge-discharge processes carried out on the battery at a certain C-rate where 1 cycle is calculated from the use of battery power from the initial condition of the full battery until the battery runs out [26].
Acknowledgements The authors acknowledge financial support from the Indonesian Ministry of Research, Technology, and Higher Education (Kemenristekdikti) through Fundamental Research (Penelitian Dasar) Scheme with grant number 054/E5/PG.02.00.PT/2022 dan 469.1/UN27.22/PT.01.03/2022.

The samples were matched with the NiO sample from Ghanbarabadi and Khoshandam's research[34] and Joint Committee on Powder Diffraction Standards (JCPDS) card of NiO with number 44-1159.
The crystalline sizes of the ternary metal oxide were calculated using the Scherrer equation: D = k λβcosθ (3) Where λ is the wavelength of the X-ray diffraction (1.54056 Å for Cu Kα radiation), k is a constant number of 0.94, β is the intensity of full width at half maximum (FWHM) and θ is the peak position.
All NCA samples were indexed using JCPDS Card of NCA number 87-1542.

Introduction Although there are a large number of ABO3 simple perovskite, when one or more cations of the structure are replaced by other ones generates a group of compounds known as double perovskite, AA'BB'O3 or A2BB'O6.
The synthesis performed with less air flow (3 L/min) and higher temperature (900 °C) showed a greater number of particles agglomerated and an increase in crystallite size to 14 nm.
All XRD diffraction patterns exhibited only a set of diffraction lines ascribed to SrTiO3 single phase powders, which were identified from the JCPDS card number 35-0734 with cubic symmetry and space group Pmm (221).

All samples with different amount of Y3+-doping have very obvious diffraction peaks of layered LiV3O8 (JCPDS card: No.18-754) with space group P21/m.
Samples d(100)/[Å] I(100)/I(003) I(100)/I(020) y = 0 6.318 7.08 15.75 y = 0.03 6.329 5.13 6.96 y = 0.05 6.333 3.03 2.08 y = 0.1 6.323 4.27 2.20 Fig. 2 shows the specific capacity as a function of cycle number for LiV3-yYyO8 materials at 0.25 C charge and discharge rates.
Fig. 2 The dependence of specific capacity of Fig. 3 The dependence of specific capacity of LiV3-yYyO8 on the cycle number at 0.25 C LiV3-yYyO8 on the cycle number at 0.5 C Fig. 4 shows the CV curves of Li/LiV3-yYyO8 (y=0, 0.03 and 0.2) cells at a scan rate of 0.1 mV s-1 in the voltage range of 2.0-4.0 V.

Results and Discussions As shown in Fig.1, the samples after ammoniation are indexed to a hexagonal wurtzite GaN phase (JCPDS card No.65-3410) with lattice constant of a = 0.3186 nm and c = 0.5178 nm, which are consistent with the reported values for bulk GaN [6].
As shown in Fig.3 (a) and (b), there are a large number of one-dimensional nanowires distributed on the substrate surface, but the nanowires shown in Fig.3 (a) are coase in surface with bad crystalline, however, when the temperature increases to 900 oC, the nanowires become smooth and clean with uniform diameter of about 50 nm along the spindle direction and several tens of microns in length.
When the ammoniating temperature is 950 oC, the number of the nanowires decreases sharply and the nanorods with the size of 260 nm in diameter appear.
However, the number of the GaN nanowires decrease and the nanorods appear when the ammoniating temperature is higher than 900 oC because of abnormal growth or recrystallization and decomposition or sublimation of the GaN grains at higher temperature.

The diffraction peaks of spectral are in consistence with the JCPDs standard cards.
Table 1 is the sample serial number.
Table 1 Serial number of samples Sample serial number Absorbent name Sample 1 Magnetic fly-ash hollow cenosphere Sample 2 FeSmO3 Sample 3 Magnetic fly-ash hollow cenosphere (had not been pre-treated)+ FeSmO3 Sample 4 Magnetic fly-ash hollow cenosphere (had been pre-treated) + FeSmO3 Fig. 5 Relationship of absorbing effectiveness and frequency on samples.