Sort by:
Publication Type:
Open access:
Publication Date:
Periodicals:
Search results
Online since: April 2009
Authors: Rong Zhou Gong, Hai Feng Li, Li Ren Fan, Gang He, Xiang Shen
Hsing-I Hsiang et al. [12] prepared Co2Z particles by molten salt method using
Li2SO4-Na2SO4 mixture and reported the changes of magnetic properties, whereas particle
morphology wasn't homogeneous and containing a quantity of BaSO4 and spinel phase.
El-Sayed and E.M.A.
El-Sayed and E.M.A.
Online since: April 2010
Authors: Mourad Keddam
Keddam
Faculté de Génie Mécanique et Génie des Procédés, Département de S.D.M, B.P N°32, 16111,
El-Alia, Bab- Ezzouar, Alger, Algérie
keddam@yahoo.fr
Keywords: Boriding, Growth kinetics, Iron boride, Incubation time, Diffusion model.
The incubation time, inct , required for an appearance of the BFe2 iron boride was obtained by a linear regression from the experimental data taken from Campos-Silva et al. [6].
The incubation time, inct , required for an appearance of the BFe2 iron boride was obtained by a linear regression from the experimental data taken from Campos-Silva et al. [6].
Online since: December 2012
Authors: Yue Li, Xin Liang Jiang
Balenda et al. first used simple springs to represent the foundation flexibility supporting asymmetric multi-storey buildings[2].
[6] Wilson EL, Mingwu Yuan.
[6] Wilson EL, Mingwu Yuan.
Online since: March 2010
Authors: Jin Yong Xu, Jia Wei Xiang, Zhan Si Jiang
The construction of multi-scale wavelet-based element
The static disc is modeled by a Rayleigh-Timoshenko beam considering the effects of the
cross-section inertia and shear deformation, the elemental potential energy eU can be written as
x
x
w
k
GA
dx
x
EI
U
e
e l
l
z
e
d)
d
d
(
2
)
d
d
(
2
2
0
2
0
θ
θ
−
+
= ∫∫ (3)
where E is Young's modulus, zI is the moment of inertia, ),( txw is the transverse displacement, el is
elemental length, Gis the shear modulus, A is the area of the cross-section, k is the shear
deformation coefficient (In the present work, we suppose 9/10=k ), and ),( txθ is the rotation of the
beam section due to bending.
The layout of elemental nodes and the corresponding DOFs where { }T21 p e www K=w , { }T21 p e θθθ K=θ , the column vector and transformation matrix eT is 1T 1 T 2 T 1 T ))]( )( )(([ − + = pj j j e ξ ξξ Φ ΦΦT K (7) Substituting Eq.(6) into Eq.(3) and Eq.(4) respectively, we obtain ∂ ∂ ∂ ∂ + ∂ ∂ ∂ ∂ = + + + = )()( 2 1 )()( 2 1 )()( 2 1 )()( 2 1 )()( 2 1 )()( 2 1 ,T ,T 4,T 3,T 2,T 1,T t tt t T U e re e e be e e eee eee eee eee e θ M θw M w θKθwKθθKwwKw (8) where stiffness sub-matrices are )()( 1,1T 1, e e e e kl GA TΓT K = , )()( 0,1T 2, e e e k GA TΓT K −= , T2,3, )( ee KK = and )()()()( 0,0T 1,1T 4, e ee e e e ze k GAl l EI TΓT TΓT K + = ; the mass sub-matrices )()( 0,0T , e e e be Al TΓT M ρ= and )()( 0,0T , e e e zre l I TΓT M ρ = , in which
The layout of elemental nodes and the corresponding DOFs where { }T21 p e www K=w , { }T21 p e θθθ K=θ , the column vector and transformation matrix eT is 1T 1 T 2 T 1 T ))]( )( )(([ − + = pj j j e ξ ξξ Φ ΦΦT K (7) Substituting Eq.(6) into Eq.(3) and Eq.(4) respectively, we obtain ∂ ∂ ∂ ∂ + ∂ ∂ ∂ ∂ = + + + = )()( 2 1 )()( 2 1 )()( 2 1 )()( 2 1 )()( 2 1 )()( 2 1 ,T ,T 4,T 3,T 2,T 1,T t tt t T U e re e e be e e eee eee eee eee e θ M θw M w θKθwKθθKwwKw (8) where stiffness sub-matrices are )()( 1,1T 1, e e e e kl GA TΓT K = , )()( 0,1T 2, e e e k GA TΓT K −= , T2,3, )( ee KK = and )()()()( 0,0T 1,1T 4, e ee e e e ze k GAl l EI TΓT TΓT K + = ; the mass sub-matrices )()( 0,0T , e e e be Al TΓT M ρ= and )()( 0,0T , e e e zre l I TΓT M ρ = , in which
Online since: January 2012
Authors: Rui Ping Zhang, Cheng Qin Cai
[3] A Hbeish and Z H El-Hilw, Coloration Technology. 117(2001)104
[7] D.K.Liu, Z.P.Gu and J.X.Qiu,et al, Printing and dyeing. 30 (2004) 5.
[7] D.K.Liu, Z.P.Gu and J.X.Qiu,et al, Printing and dyeing. 30 (2004) 5.
Online since: March 2010
Authors: Ze Kun Yao, Hong Zhen Guo, Li Jun Tan, Shi Qiong Li, Chun Qin
Such similar asymmetric structure was also observed by Hongtao
Zhang et al. [9] in the EB welded joints of Ti3Al/TC4.
Welding process UTS (MPa) YS(MPa) EL(%) RA(%) Fracture location LFW 505 / 1.2 2.4 Weld interface EBW 1100 1030 13 52.5 TC11 alloy side Fig. 7.
Welding process UTS (MPa) YS(MPa) EL(%) RA(%) Fracture location LFW 505 / 1.2 2.4 Weld interface EBW 1100 1030 13 52.5 TC11 alloy side Fig. 7.
Online since: September 2011
Authors: Bo Liang, Lin Jie Chen
Fig.3 is El-centro wave acceleration which is adopted in seismic wave.
CQSLBFY096) References [1] F.Gao, Y.C.Shi, S.H.Yan et al.: China Journal of Highway and Transport.
CQSLBFY096) References [1] F.Gao, Y.C.Shi, S.H.Yan et al.: China Journal of Highway and Transport.
Online since: February 2015
Authors: Nur Amira Mamat Razali, Noriean Azraaie, Nur Ain Ibrahim, Fauziah Abdul Aziz, Shahidan Radiman, Nurul Aimi Mohd Zainul Abidin
Dufresne, et al.: Journal of Material Science, Vol. 45 (2010), No 1, p. 1-33
Herrick et. el in: Microfibrillated Cellulose: Morphology and Accessibility, Journal of Applied Polymer Science: Applied Polymer Symposium, Vol 37 (1983), p. 797-813
Herrick et. el in: Microfibrillated Cellulose: Morphology and Accessibility, Journal of Applied Polymer Science: Applied Polymer Symposium, Vol 37 (1983), p. 797-813
Online since: August 2014
Authors: Yuan Hua Wu, Meng Nan An, Jian Guang Chen, Xiu Xiang Zhao, Yan Qin Zhao, Xu Min Yin
The Ultraviolet-visible spectrophotometry method was used to determine polygalacturonase (PG) and polymethylgalacturonase(PMG) by a UV Lambda 25 in 540 nm wave length, while the method of Hoffman et al. was conducted to determine polygalacturonic acid trans-eliminase, (PGTE) and pectin methyl trans-eliminase, (PMTE) in 232nm wave length.
EL-Abyad, M.
EL-Abyad, M.
Online since: September 2013
Authors: Bin Wang, Zhao Huan Tang, Kai Zhou Tan, Jia Nan Wang
References
[1] SeongDong Kim, Iljung Kim, Minkoo Han, et al: Solid-State Electronic.
Forum Vol. 38-2(1995), p. 345 [2] Vrej Barkhordarian, International Rectifier, El Segundo, Ca.Power MOSFET Basics [3] Sze S M: Physics of Semiconductor Devices .Second Edition, 1981:222 [4] Jiang Yan, Chen Long, Shen Keqiang: Chinese Journal of Electron Device.
Forum Vol. 38-2(1995), p. 345 [2] Vrej Barkhordarian, International Rectifier, El Segundo, Ca.Power MOSFET Basics [3] Sze S M: Physics of Semiconductor Devices .Second Edition, 1981:222 [4] Jiang Yan, Chen Long, Shen Keqiang: Chinese Journal of Electron Device.