The Mean Projected Range and Range Straggling of Er Ions Implanted in 6h Silicon Carbide

Xi Feng Qin; Hui Ning Wang; Zi Wu Ji; Feng Xiang Wang; Gang Fu

doi:10.4028/www.scientific.net/AMR.463-464.798

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 463-464The Mean Projected Range and Range Straggling of...

The Mean Projected Range and Range Straggling of Er Ions Implanted in 6h Silicon Carbide

Abstract:

Due to the need to reduce electronic device sizes, it is very important to consider the depth distribution of ions implanted into a crystalline target. The mean projected ranges and range straggling for energetic 200-500 keV Er ions implanted in 6H-SiC were measured by means of Rutherford backscattering followed by spectrum analysis. The measured values are compared with Monte Carlo code (SRIM2010) calculations. It has been found that the measured values of the mean projected range R_P are good agreement with the SRIM calculated values; for the range straggling ΔR_p, the difference between the experiment data and the calculated results is much higher than that of R_p.

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Advanced Materials Research (Volumes 463-464)

Pages:

798-801

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.463-464.798

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Online since:

February 2012

Authors:

Xi Feng Qin, Hui Ning Wang, Zi Wu Ji, Feng Xiang Wang, Gang Fu

Keywords:

6H-SiC, Er Ion Implantation, Projected Range, Range Straggling, Rutherford Backscattering Technique

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