Search results

Performance Improvement of TiO2/Ti Composite Photocatalyst Film by Heat Oxidation Treatment Yun Lu1, a, Hiroyuki Yoshida2, Keisuke Toh2, Liang Hao2 and Mitsuji Hirohashi1 1Graduate school & Faculty of Engineering, Chiba University, Japan 1-33, Yayoi-cho, Inage-ku, Chiba 263-8522, Japan 2Graduate school, Chiba University, Japan aluyun@faculty.chiba-u.jp Keywords: TiO2, composite photocatalyst, film, heat oxidation, mechanical coating technique, activity.
After that, we proposed and performed an advanced MCT, 2-step MCT, to form TiO2/Ti composite photocatalyst film with anatase TiO2 [7].
Hirohashi: The 5th International Forum on Advanced Materials Science and Technology (IFAMST 5), Zhangjiajie, China, 11-17th, June 2006, p.30
Hirohashi: 7th International Forum on Advanced Material Science and Technology (IFAMST 7), Dalian, China, 26-28th, June 2010, No.A-240

Optimization of Heat Transfer Design for High Quality 4H-SiC Ingot Growth Seung Jun Lee1,a, Su Ho Kim1,b, Chae Young Lee1,c, Jong Hwi Park1,d, Jung Woo Choi1,e, Hyong Suk Lee1,f, Jung Gyu Kim1,g, Kap Ryeol Ku1,h, Min Kyu Kang2,i and Won Jae Lee2,j* 1Senic, 17-15, 4sandan 7-ro, Jiksan-eup, Seobuk-gu, Cheonan-si, Chungcheongnam-do, Korea 2Department of Advanced Materials Engineering, Dong-Eui University, 176, Eomgwang-ro, Busanjin-gu, Busan, Korea asjlee@senic.co.kr, bshkim@senic.co.kr, ccylee@senic.co.kr, djhpark@senic.co.kr, ejwchoi@senic.co.kr, fhslee@senic.co.kr, gjgkim@senic.co.kr, hkrku@senic.co.kr, ikminq980@gmail.com, jleewj@deu.ac.kr Keywords: Optimizing Heat Transfer, Physical Vapor Transport (PVT), Temperature Gradient, Polytype Stabilization, Hot Zone Abstract.
Acknowledgements This work was supported by Technology Innovation Program (Project Number: 1415185945, Project Name: Development of next-generation power semiconductor based on Si-on-SiC structure), (Project Number: 00402234, Project Name: Development of highly flat, highly clean large area polished SiC single crystal wafers by utilizing advanced process technology for power semiconductor application) funded by the Ministry of Trade, Industry and Energy.
Balkas, Bulk growth of large area SiC crystals, Materials Science Forum 858 (2016) 5-10
Forum 483-485 (2005) 21-24
Aspalli, SiC : an advanced semiconductor material for power devices, IJRET, Vol. 3 (2014) 248-252

Lee2,b 1 Materials Research Team, Advanced Technology Center for Hyundai Motor Company & Kia Motors Corporation, Jangduk-dong, Hwasung-si, Gyunggi-do 445-706, Korea 2 School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea a samemind@hyundai-motor.com, bdnlee@snu.ac.kr Keywords: Aluminum alloy, asymmetric rolling, shear deformation texture, grain refinement.
Forum Vol. 273-275 (1998), p. 391
Kang, in: Advanced Automobile Materials (Proc.
Conf. on Advanced Automobile Materials) edited by X.
Forum Vol. 449-452 (2004), p. 1

Parka Department of Materials Science and Metallurgical Engineering, Nanomaterials Research Center, Sunchon National University, Sunchon 540-742, Korea a ybpark@sunchon.ac.kr Keywords: Abnormal grain growth, Electroforming, Fe-Ni alloys, Nanostructure, OIM, Texture Abstract.
Acknowledgment This research was supported by a grant from the Center for Advanced Materials Processing (CAMP) of the 21st Century Frontier R&D Program funded by the Ministry of Science and Technology, Korea.
Forum Vol. 408-412 (2002), p. 919
Forum Vol. 408-412 (2002), p. 931
Forum Vol. 495-497 (2005), p. 749

Liquid Nitrogen Storing and Pressurization Test of a Type III Cryogenic Propellant Tank Sang-Guk Kang1, Myung-Gon Kim 1, Sang-Wuk Park1, Chun-Gon Kim 1 and Cheol-Won Kong2 1 Division of Aerospace Engineering, Korea Advanced Institute of Science and Technology (KAIST) 373-1 Guseong-dong, Yuseong-gu, Daejeon, 305-701, Republic of Korea 2 Department of Structures and Materials, Korea Aerospace Research Institute (KARI) 45, Eoeun-dong, Yuseong-gu, Daejeon, 305-333, Republic of Korea 1 cgkim@kaist.ac.kr, 2kcw@kari.re.kr Keywords:�Cryogenic, Composite, Type 3 tank, Liquid nitrogen storing, Pressurization test Abstract.
Gates: 10th AIAA/ASME/ASCE/AHS adaptive structures forum, 4th AIAA nondeterministic approaches forum, 3rd AIAA gossamer spacecraft forum (2002), p. 1677

Evaluation of Interfacial Thermal Resistance of Al-Si Alloy by Using Image-Based Simulation Kenjiro Sugio1,a*, Tomoyasu Ishii1,b and Gen Sasaki1,c 1Graduate School of Advanced Science and Engineering, Hiroshima University,　 　　　　　　1-4-1 Kagamiyama, Higashi-Hiroshima, 739-8527, Japan aksugio@hiroshima-u.ac.jp, bm206373@hiroshima-u.ac.jp, cgen@hiroshima-u.ac.jp Keywords: thermal conductivity, image analysis, interfacial thermal resistance, gravity casting Abstract.
[2] Kenjiro Sugio, Keisuke Kono, Yongbum Choi, Gen Sasaki, Materials Science Forum, 941 (2018) 1939-1943
[3] Kenjiro Sugio, Takuya Kawata, Yongbum Choi, Gen Sasaki, Materials Science Forum, 1016 (2021) 1411-1416 [4] M.
[6] Kenjiro Sugio, Rio Yamada, Yongbum Choi and Gen Sasaki, Materials Science Forum, 879 (2017) 1889-1894

Muddle 1,f 1 Department of Materials Engineering, ARC Centre of Excellence for Design in Light Metals, Monash University, Victoria 3800, Australia 2, 3 The University of Queensland, School of Mechanical and Mining Engineering, ARC Centre of Excellence for Design in Light Metals, Brisbane, Qld 4072, Australia 4 Lockheed Martin Aeronautics Company, Fort Worth, TX 76108, USA a dacian.tomus@eng.monash.edu.au, bma.qian@uq.edu.au (corresponding author), cp.yu@uq.edu.au, dcraig.a.brice@lmco.com, ecolleen.bettles@eng.monash.edu.au, f barry.muddle@eng.monash.edu.au Keywords: Electron beam direct manufacturing, aluminium, scandium, precipitation hardening Abstract.
Electron beam direct manufacturing (EBDM) is a novel layer additive manufacturing technique developed since 2002 by Lockheed Martin and NASA Langley Research Centre for advanced aerospace applications [1, 2].
Forum 519-512 (2006) p. 1291
Forum 519-512 (2006) p. 1297
Forum 618619 (2009) p. 612

Introduction Due to the development of computer industry, reverse engineering, taken as a method of designing and developing products, has been gradually evolved into important means to enhance production efficiency and innovation level in recent years.
Color reverse engineering technique can not only add extra values to system and product, but also improve application values of products.
Color 3D data processing, which is the core technique for color reverse engineering, can realize 3D digitization of antiques, art wares as well as products.
Materials Science Forum Vols. *** 717 The research of preprocessing places emphasis on the data reduction considering the over-crowed point cloud data.
It should be Advances in Materials Manufacturing Science and Technology 720 explained that the final grids border includes extracted pionts and color-boundary points.

Taketo Sakuma 1 A MODERN APPROACH TO CONTROL GRAIN BOUNDARIES IN CERAMICS Taketo SAKUMA, Yuich IKUHARA* and Takahisa YAMAMOTO** Department of Advanced Materials Science, Graduate School of Frontier Science, The University of Tokyo 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 Japan, Now at the National Institution for Academic Degrees and University Evaluation (NIAD-UE) *Engineering Research Institute, School of Engineering, The University of Tokyo 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan ** Department of Advanced Materials Science, Graduate School of Frontier Science, The University of Tokyo 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8651, Japan Abstract It is critically important to control grain boundaries in ceramics.
Watanabe, "Grain Boundary Engineering in Ceramics; from Grain Boundary Phenomena to Grain Boundary Quantum Structures" ed. by T.
Forum. 294-296 (1999)1
Forum, 243-245 (1997) 425
Forum, 170-172 (1994) 369

Process Gas Control for High-Resistance HPSI-SiC Growth Seung Jun Lee1,a, Su Ho Kim1,b, Chae Young Lee1,c, Jong Hwi Park1,d, Jung Woo Choi1,e, Jung Gyu Kim1,f, Kap Ryeol Ku1,g, Gi-Uk Lee2,h and Won Jae Lee2,i* 1Senic, 17-15, 4sandan 7-ro, Jiksan-eup, Seobuk-gu, Cheonan-si, Chungcheongnam-do, Korea 2 Department of Advanced Materials Engineering, Dong-Eui University, 176, Eomgwang-ro, Busanjin-gu, Busan, Korea asjlee@senic.co.kr, bshkim@senic.co.kr, ccylee@senic.co.kr, djhpark@senic.co.kr, ejwchoi@senic.co.kr, fjgkim@senic.co.kr, gkrku@senic.co.kr, hdlrldnr7774@naver.com, i*leewj@deu.ac.kr Keywords: High resistivity, HPSI-SiC, PVT, Hydrogen Abstract.
Acknowledgements This work was supported by Technology Innovation Program (Project Number 0: 1415185945, Project Name 0: Development of next-generation power semiconductor based on Si-on-SiC structure), (Project Number 0: 00402234, Project Name : Development of highly flat, highly clean large area polished SiC single crystal wafers by utilizing advanced process technology for power semiconductor application) funded by the Ministry of Trade, Industry and Energy.
Krupka, Effect of nitrogen doping on the growth of 4H polytype on the 6H-SiC seed by PVT method, Material Science Forum 29 (2012) 717-720
Jr, Development of large diameter high-purity semi-insulating 4H-SiC wafers for microwave devices, Materials Science Forum 457-460 (2004) 35-40
Ku, Hydrogen effect on SiC single crystal prepared by the physical vapor transport method, Materials Science Forum 556-557 (2007) 25-28