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Self-evaluation E-learning System for Manufacturing Engineering Subjects D.
García-Lomas Department of Mechanical and Materials Engineering.
Almost every engineering degree in the EHEA includes at least a basic subject on manufacturing engineering, usually called Manufacturing Technology (MT), appearing during the last years of the degree.
As a consequence, the students come across an increased difficulty corresponding to this new kind of contents that should be understood in order to face up manufacturing processes within advanced courses or in their future career.
Schmid: Manufacturing Engineering & Technology, Prentice Hall, (2009)

Janzén, Microelectronic Engineering 86 (2009) 1194
Saddow, Silicon Carbide Biotechnology - A Biocompatible Semiconductor for Advanced Biomedical Devices and Applications, Elsevier, 2011
Computational Materials Science and Surface Engineering 2, No. 3-4 (2009) 227
Cheung, Materials Science Forum 711 (2011) 43
Alquier, Microelectronic Engineering 105 (2013) 65.

SiC MOSFETs Biased C-V Curves: A Temperature Investigation Ilaria Matacena1,a*, Luca Maresca1,b, Michele Riccio1,c, Andrea Irace1,d, Giovanni Breglio1,e, Alberto Castellazzi2,f, Santolo Daliento1,g 1Dept. of Electrical Engineering and Information Technologies, University Federico II, via Claudio, 21, 80125, Naples, Italy 2Kyoto University of Advanced Science, 18 Gotanda-cho, Yamanouchi, Ukyo-ku, 615-8577 Kyoto, Japan ailaria.matacena@unina.it, bluca.maresca@unina.it, cmichele.riccio@unina.it, da.irace@unina.it, ebreglio@unina.it, falberto.castellazzi@kuas.ac.jp, gdaliento@unina.it.
Materials Science Forum.
Materials Science Forum.
Materials Science Forum.
In Materials Science Forum (Vol. 1062, pp. 653-657).

Yamauchi1, d 1Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, Osaka, Japan 2National Institute of Advanced Industrial Science and Technology, Japan 3R&D Partnership for Future Power Electronics Technology, Japan aisohashi@up.prec.eng.osaka-u.ac.jp, bsano@prec.eng.osaka-u.ac.jp, ct-kato@aist.go.jp, dyamauchi@prec.eng.osaka-u.ac.jp Keywords: SiC, polishing, planarization, platinum, catalyst, 6-inch, etching Abstract.
Forum 778–780 (2014) 17–21
Forum 645–648 (2010) 775–778
Forum 679-680 (2011) 493

The joint conference provided concurrent forums for the exchange of research findings in the science and technology of engineering ceramics and high temperature ceramic matrix composites.
The challenge and opportunities in advanced ceramic matrix materials were focused on the new science and engineering technology of 21th century.
Two sets of symposium proceedings, "Science of Engineering Ceramics" and "High Temperature Ceramic Matrix Composites", were published as Vol. 2 and Vol. 3 of CSJ Series (Publ.
In the proceedings for EnCera' 98 (CSJ Series, Vol. 2), 14 7 papers including 2 keynote, 28 invited and 117 contributed papers were published after reviewing by two scientists of international ceramic communities in the sessions of "Keynote Papers", "Modeling of Microstructural Evolution", "Novel Processing", "Advanced Oxide Ceramics", "Advanced Non-oxide Ceramics", "Particulate, Platelet and Whisker Reinforced Composites", "Nanostructured Ceramics and Nanocomposites", "Synergy Ceramics", "Fracture, Deformation and Mechanical Reliability".
"Advanced Refractories", and "Joining, FGM and Applications" .

Nikitina 1 1 School of Electrical, Electronic and Computer Engineering, Merz Court, University of Newcastle, Newcastle, NE1 7RU, U.K.
Despite the recent advances in the quality of oxide layers on SiC, the mobility of inversion layers is still low and this will affect the maximum frequency of the operation for these devices.
Despite recent advances in the fabrication of the silicon carbide / silicon dioxide interface [1] and the introduction of high κ dielectric structures [2], the mobility under the gate dielectric is always low and this is mainly due to the influence of interface states [3] at the SiC/SiO2 interface.
Perez-Tomas, et al.: Materials Science Forum, Vols. 483 - 485, (2005), p. 713 [3] E.
Takahashi, et al.: Materials Science Forum, Vols. 457 - 460, (2004), p. 743 [6] A.

Comparison of Conduction Mechanisms in Heavily Al-Doped 4H-SiC and Heavily Al- and N-Codoped 4H-SiC Hideharu Matsuura1,a *, Akinobu Takeshita1, Tatsuya Imamura1, Kota Takano1, Kazuya Okuda1, Atsuki Hidaka1, Shiyang Ji2, Kazuma Eto2, Kazutoshi Kojima2, Tomohisa Kato2, Sadafumi Yoshida2 and Hajime Okumura2 1Department of Electrical and Electronic Engineering, Osaka Electro-Communication University, Neyagawa, Osaka 572-8530, Japan 2Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan amatsuura@osakac.ac.jp Keywords: Temperature-dependent resistivity, p-type 4H-SiC, Codoped 4H-SiC, Heavily doped 4H-SiC, Al-doped 4H-SiC, Al- and N-codoped 4H-SiC Abstract: The conduction mechanisms in heavily Al-doped and heavily Al- and N-codoped p-type 4H-SiC epilayers were investigated.
Forum 778-780 (2014) 135-138
Forum 740-742 (2013) 181-184
Forum 457-460 (2004) 685-688
Forum 556-557 (2007) 367-370

Preface 3rd International Conference on Material Science and Engineering Technology (3rd ICMSET 2019) was taken place in Saipan, USA, during March 15-17, 2019.
The objective of ICMSET 2019 is to bring together academics, scientists, engineers, postgraduates and other professionals in the area of material science and engineering technology from all over the world.
It provides a high-standard international forum to introduce, to exchange and to discuss recent advances novel and practical techniques or application in the field of material engineering and application.

Preface We are delighted to invite you to participate in 2011 International Conference on Advanced Materials in Microwaves and Optics in Bangkok, Thailand, from September 30 to October 1, 2011.
In all cases, microwave includes the entire SHF band (3 to 30 GHz, or 10 to 1 cm) at minimum, with RF engineering often putting the lower boundary at 1 GHz (30 cm), and the upper around 100 GHz (3mm).
The goal of this Conference is to bring together the researchers from academia and industry as well as practitioners to share ideas, problems and solutions relating to the multifaceted aspects of Advanced Materials in Microwaves and Optics.
We believe that this forum will be the most comprehensive Conference focused on the various aspects of advances in Advanced Materials in Microwaves and Optics.
For this conference provides a chance for academic and industry professionals to discuss recent progress in the area of Advanced Materials in Microwaves and Optics.

Preface The 2019 International Symposium on Advanced Materials and Application (ISAMA 2019) was taken place in Seoul, South Korea on January 18-20, 2019.
The objective of ISAMA 2019 is to bring together academics, scientists, engineers, postgraduates and other professionals in the area of material science and engineering technology from all over the world.
It provides a high-standard international forum to introduce, to exchange and to discuss recent advances novel and practical techniques or application in the field of material engineering and application.