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Wafer Level Hermetic Packaging for RF-MEMS Devices Using Electroplated Gold Layers

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Abstract:

Thermocompression bonding of electroplated gold is a promising technique for achieving low temperature, wafer level hermetic bonding without the application of an electric field or high temperature. Silicon wafers were completely bonded at 320 at a pressure of 2.5. The interconnection between the packaged devices and external terminal did not need metal filling and was made by gold films deposited on the sidewall of the via-hole. In the hermeticity test, packaged wafers had the leak rate of 2.74 ± 0.61 × 10-11 Pa m3/s. In the result of application in packaging of FBAR filter, the insertion loss is increased from -0.75dB to -1.09dB at 1.9.

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Info:

Periodical:

Key Engineering Materials (Volumes 326-328)

Pages:

617-620

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.326-328.617

Citation:

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Online since:

December 2006

Authors:

Gil Soo Park, Ji Hyuk Yu, Sang Won Seo, Woo Beom Choi, Kyeong Kap Paek, Man Young Sung, Heung Woo Park, Sang Kyeong Yun, Byeong Kwon Ju

Keywords:

Gold-Gold Bonding, Packaging, Rf MEMS Switch, Thermocompression Bonding, Wafer Level Packaging

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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