Paper Titles
‘Switch-Back Epitaxy’ as a Novel Technique for Reducing Stacking Faults in 3C-SiC
p.291
Growth Acceleration in FLASiC Assisted Short Time Liquid Phase Epitaxy by Melt Modification
p.295
Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVD
p.299
Selective Epitaxial Growth of 3C-SiC on Si Using Hexamethyldisilane in a Resistance Heated MOCVD Reactor
p.303
Growth of 3C-SiC on Si Molds for MEMS Applications
p.307
Nitrogen-Doping of Polycrystalline 3C-SiC Films Deposited by Low Pressure Chemical Vapor Deposition
p.311
Multi-Scale Simulation of MBE-Grown SiC/Si Nanostructures
p.315
Theory of Dislocations in SiC: The Effect of Charge on Kink Migration
p.321
Structure of Carrot Defects in 4H-SiC Epilayers
p.327

Growth of 3C-SiC on Si Molds for MEMS Applications

Article Preview

Abstract:

A hetero-epitaxial 3C-SiC growth process in a low-pressure hot-wall CVD reactor has been developed on planar Si (100) substrates. The growth rate achieved for this process was about 10 μm/h. The process consists of silane/propane/hydrogen chemistry with HCl used as a growth additive to increase the growth rate. 3C-SiC has also been grown on 22, 52 and 123 +m deep etched MEMS structures formed by DRIE of (100) Si at a rate of about 8 +m/h. Secondary electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD) were used to analyze the quality of the 3C-SiC films.

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2005 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

307-310

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.307

Citation:

Cite this paper

Online since:

October 2006

Authors:

M. Reyes, M. Waits, S. Harvey, Y. Shishkin, Bruce Geil, J.T. Wolan, Stephen E. Saddow

Keywords:

Heteroepitaxy, Hot-Wall CVD, Micro-Electromechanical System (MEMS)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2006 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] L. Jiang, R. Cheung, M. Hassan, A.J. Harris, J.S. Burdess, C. A. Zorman, and M. Mehregany: J. Vac. Sci. Technol. B 21, (2003), p.2998.

DOI: 10.1116/1.1627804

Google Scholar

[2] S.E. Saddow, M. E. Okhusyen, M. S. Mazzola, M. Dudley, X.R. Huang, W. Huang, H. Su, and M. Shamsuzzoha: Mat. Res. Soc. Symp. Proc. 535, (1998), p.107.

DOI: 10.1557/proc-535-107

Google Scholar

[3] O. Kordina, L. -O. Björketun, A. Henry, C. Hallin, R.C. Glass, L. Hultman, J. -E. Sundgreen, and E. Janzén: J. Cryst. Growth 154, (1995), p.303.

DOI: 10.1016/0022-0248(95)00136-0

Google Scholar

[4] R. Myers, O. Kordina, Y. Shishkin, S. Rao, R. Everly, and S. E. Saddow: Mat. Sci. Forum 483- 485, (2005), p.73.

DOI: 10.4028/www.scientific.net/msf.483-485.73

Google Scholar

[5] R. L. Myers, Y. Shishkin, O. Kordina, and S. E. Saddow, these Proceedings.

Google Scholar

[6] F. Laermer and A. Schilp, Patent DE 4241045 (U.S. Patent No. 5, 501, 893) (1994). Si Si Si 3C-SiC 3C-SiC 3C-SiC (a) (b) (c).

DOI: 10.4028/www.scientific.net/msf.858.143

Google Scholar