Paper Titles
Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVD
p.299
Selective Epitaxial Growth of 3C-SiC on Si Using Hexamethyldisilane in a Resistance Heated MOCVD Reactor
p.303
Growth of 3C-SiC on Si Molds for MEMS Applications
p.307
Nitrogen-Doping of Polycrystalline 3C-SiC Films Deposited by Low Pressure Chemical Vapor Deposition
p.311
Multi-Scale Simulation of MBE-Grown SiC/Si Nanostructures
p.315
Theory of Dislocations in SiC: The Effect of Charge on Kink Migration
p.321
Structure of Carrot Defects in 4H-SiC Epilayers
p.327
Characterization of SiC Crystals by Using Deep UV Excitation Raman Spectroscopy
p.333
Structures of Comets in a Homoepitaxially Grown 4H-SiC Film Studied by DUV Micro-Raman Spectroscopy
p.339

Multi-Scale Simulation of MBE-Grown SiC/Si Nanostructures

Article Preview

Abstract:

The main obstacle for the implementation of numerical simulation for the prediction of the epitaxial growth is the variety of physical processes with considerable differences in time and spatial scales taking place during epitaxy: deposition of atoms, surface and bulk diffusion, nucleation of two-dimensional and three-dimensional clusters, etc. Thus, it is not possible to describe all of them in the framework of a single physical model. In this work there was developed a multi-scale simulation method for molecular beam epitaxy (MBE) of silicon carbide nanostructures on silicon. Three numerical methods were used in a complex: Molecular Dynamics (MD), kinetic Monte Carlo (KMC), and the Rate Equations (RE). MD was used for the estimation of kinetic parameters of atoms at the surface, which are input parameters for other simulation methods. The KMC allowed the atomic-scale simulation of the cluster formation, which is the initial stage of the SiC growth, while the RE method gave the ability to study the growth process on a longer time scale. As a result, a full-scale description of the surface evolution during SiC formation on Si substrates was developed.

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2005 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

315-318

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.315

Citation:

Cite this paper

Online since:

October 2006

Authors:

Alexander A. Schmidt, Yuri V. Trushin, K.L. Safonov, V.S. Kharlamov, Dmitri V. Kulikov, Oliver Ambacher, Joerg Pezoldt

Keywords:

Molecular Dynamic (MD), Monte-Carlo, Rate Equations, Self-Ordering

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2006 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] J.B. Casady and R.W. Johnson: Solid-State Electronics, Vol. 39 (1996), p.1409.

Google Scholar

[2] U. Kaiser, S.B. Newcomb, W.M. Stobbs, M. Adamik, A. Fissel and W. Lichter: J. Mater. Res. Vol. 13 (1998), p.3571.

Google Scholar

[3] V. Cimalla, Th. Stauden, G. Ecke, F. Scharmann, G. Eichhorn, S. Sloboshanin, J.A. Schaefer and J. Pezoldt: Appl. Phys. Lett. Vol. 73 (1999), p.3542.

DOI: 10.1063/1.122801

Google Scholar

[4] F. Scharmann, P. Malarski, W. Attenberger, J.K.N. Linder, B. Strizker, Th. Stauden and J. Pezoldt: Thin Solid Films Vol. 380 (2000), p.92.

DOI: 10.1016/s0040-6090(00)01476-0

Google Scholar

[5] J. Tersoff: Phys. Rev. B Vol. 39 (1989), p.5566.

Google Scholar

[6] E.E. Zhurkin and M. Hou: J. Phys.: Condensed Matter Vol. 12 (2000), p.6735.

Google Scholar

[7] V.S. Kharlamov, E.E. Zhurkin and M. Hou: Nucl. Inst. and Meth. Vol. B193 (2002), p.538.

Google Scholar

[8] E. Schoell and S. Bose: Solid-State. Electronics Vol. 42 (1998), p.1587.

Google Scholar

[9] A.A. Schmidt, V.S. Kharlamov, K.L. Safonov, Yu.V. Trushin, E.E. Zhurkin, V. Cimalla, O. Ambacher and J. Pezoldt: Comp. Mater. Sci. Vol. 33 (2005), p.375.

DOI: 10.1016/j.commatsci.2004.12.005

Google Scholar

[10] K.L. Safonov, D.V. Kulikov, Yu.V. Trushin and J. Pezoldt: Proc. of SPIE Vol. 4627 (2002), p.165.

Google Scholar

[11] K.L. Safonov, Yu.V. Trushin and J. Pezoldt: Proc. of 7th Int. Moscow School of Physics, to be published.

Google Scholar

[12] K.L. Safonov, D.V. Kulikov, Yu.V. Trushin and J. Pezoldt: Proc. of SPIE, Vol. 5127 (2003), p.128.

Google Scholar

[13] Y. Shigeta, H. Fujino, and K. Maki: J. Appl. Phys. Vol. 86 (1999), p.881.

Google Scholar

[14] H. Brune, M. Giovannini, K. Bromann and K. Kern: Nature, Vol. 394, (1998), p.451.

Google Scholar

[15] V. Cimalla, A.A. Schmidt, Th. Stauden, K. Zekentes, O. Ambacher and J. Pezoldt: J. Vac. Sci. Technol. Vol. B22 (2004), p. L20.

DOI: 10.1116/1.1787520

Google Scholar