Paper Titles
Overlapping Shockley/Frank Faults in 4H-SiC PiN Diodes
p.383
Examining Dislocations in SiC Epitaxy by Light Emission from Simple Diode Structures
p.387
Photoemission of 4H-SiC pin-Diodes Epitaxied by the Sublimation Method
p.391
Investigation of Structural Stability in 4H-SiC Structures with Heavy Ion Implanted Interface
p.395
Origin of Surface Morphological Defects in 4H-SiC Homoepitaxial Films
p.399
Structure of “Star” Defect in 4H-SiC Substrates and Epilayers
p.403
Synchrotron X-ray Topographic Analysis of Dislocation Structures in Bulk SiC Single Crystal
p.407
Simulation of Threading Edge Dislocation Images in X-Ray Topographs of Silicon Carbide Homo-Epilayers
p.411
Development of Non-Destructive In-House Observation Techniques for Dislocations and Stacking Faults in SiC Epilayers
p.415

Origin of Surface Morphological Defects in 4H-SiC Homoepitaxial Films

Article Preview

Abstract:

Plan-view transmission electron microscopy (TEM) was applied to investigate the origin of surface defects in 4H-SiC homoepitaxial films. Their origin existed at the substrate/epi-film interface. Hence, almost the entire thickness of the epi-film was removed by plasma etching leaving a very thin film. Then, the etched epi-crystal was thinned from the substrate side so that we could observe the crystallographic imperfections at the substrate/epi-film interface in plan-view TEM. Morphological features of the epi-film surface remained unchanged after the plasma etching process. Hence, one-to-one correspondence between surface defects and crystallographic imperfections was confirmed by comparing optical micrographs and TEM images. Crystallographic imperfections associated with “carrot defects” were observed. They were composed of stacking faults on the (0001) plane and partial dislocations bounding them. These imperfections originated from foreign particles at the interface. From X-ray energy-dispersive spectrometry (XEDS), it was confirmed that particles contained zirconium (Zr). Selected area diffraction patterns showed that the particles were crystalline.

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2005 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

399-402

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.399

Citation:

Cite this paper

Online since:

October 2006

Authors:

Tatsuya Okada, Kouichi Okamoto, Kengo Ochi, Kouichi Higashimine, Tsunenobu Kimoto

Keywords:

Crystallographic Imperfection, TEM

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2006 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] T. Okada, T. Kimoto, K. Yamai, H. Matsunami and F. Inoko: Mat. Sci. Eng. Vol. A361 (2003), p.67.

Google Scholar

[2] T. Kimoto, N. Miyamoto and H. Matsunami: IEEE Trans. Electron Devices Vol. 46 (1999), p.471.

Google Scholar

[3] H. Matsunami and T. Kimoto: Mater. Sci. Eng. Vol. R20 (1997), p.125.

Google Scholar

[4] M. Benamara, X. Zhang, M. Skowronski, P. Ruterana, G. Nouet, J. J. Sumakeris, M. J. Paisley and M. J. O'Loughlin: Appl. Phys. Lett. Vol. 86 (2005), p.1.

DOI: 10.1063/1.1849416

Google Scholar