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Comparison between Measurement Techniques Used for Determination of the Micropipe Density in SiC Substrates
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A New Method of Mapping and Counting Micropipes in SiC Wafers
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Identification of Polytypes in Sublimation Grown 4H-SiC Crystals by High Resolution X-Ray Diffractometry
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Investigation of the Electronic Structure of the UD-4 Defect in 4H-SiC by Optical Techniques
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High Energy Local Vibrational Modes of Carbon Aggregates in SiC: Experimental and Theoretical Insight
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Identification of Polytypes in Sublimation Grown 4H-SiC Crystals by High Resolution X-Ray Diffractometry

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Abstract:

4H-SiC single crystal with a diameter of 1.5’’ has been grown by the seed sublimation method. Regions of mixed polytypes are assessed by high resolution X-ray diffractometry with the asymmetrical diffraction geometry. Multiple reflections are observed from the rocking curve measurements of a longitudinal cut 4H-SiC slice. Those reflections are indexed to be 2131 and 2131 of 4H-SiC, 2130 , 2131 , 2131 , 2132 and 2132 of 6H-SiC, 2131 , 2132 , 2134 , 2135 and 2137 of 15R-SiC respectively based on the lattice constants of different polytypes in SiC crystal. It is believed that the polytypes can be identified by high resolution X-ray diffractometry.

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Silicon Carbide and Related Materials 2005 View Preview

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

451-454

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.451

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Online since:

October 2006

Authors:

Jie Dong, Li Wang, Xiao Bo Hu, Xian Xiang Li, Juan Li, Shou Zhen Jiang, Xiu Fang Chen, Xian Gang Xu, Min Hua Jiang

Keywords:

High Resolution X-Ray Diffraction (HR-XRD), Polytype Identification

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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