Paper Titles
Investigation of the Displacement Threshold of Si in 4H SiC
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Long Distance Point Defect Migration in Irradiated SiC Observed by Deep Level Transient Spectroscopy
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Deep Level Defects Related to Carbon Displacements in n- and p-Type 4H-SiC
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Deep Traps and Charge Carrier Lifetimes in 4H-SiC Epilayers
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Deep Electron and Hole Traps in 6H-SiC Bulk Crystals Grown by the Halide Chemical Vapor Deposition
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Deep Hole Traps in As-Grown 4H-SiC Epilayers Investigated by Deep Level Transient Spectroscopy
p.501
Deep Level near EC – 0.55 eV in Undoped 4H-SiC Substrates
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Deep Traps in High-Purity Semi-Insulating 6H-SiC Substrates: Thermally Stimulated Current Spectroscopy
p.509
Quenching Photoconductivity and Photoelectric Memory in 6H-SiC
p.513

Deep Electron and Hole Traps in 6H-SiC Bulk Crystals Grown by the Halide Chemical Vapor Deposition

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Abstract:

Deep electron and hole traps were studied in a series of high purity 6H-SiC single crystals grown by Halide Chemical Vapor Deposition (HCVD) method at various C/Si flow ratios and at temperatures between 2000 oC and 2100 oC. Characterization included Low Temperature Photoluminescence (LTPL), Deep Level Transient Spectroscopy (DLTS), Minority Carrier Transient Spectroscopy (MCTS), and Thermal Admittance Spectroscopy (TAS) measurements. Concentrations of all deep traps were shown to strongly decrease with increased C/Si flow ratio and with increased growth temperature. The results indicate that the majority of deep centers in 6H-SiC crystals grown by HCVD are due to native defects or complexes of native defects promoted by Si-rich growth conditions. The observed growth temperature dependence of residual donor concentration and traps density is explained by increasing the effective C/Si ratio at higher temperatures for the same nominal ratio of C and Si flows.

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

497-500

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.497

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Online since:

October 2006

Authors:

Sung Wook Huh, A.Y. Polyakov, Hun Jae Chung, Saurav Nigam, Marek Skowronski, E.R. Glaser, W.E. Carlos, Mark A. Fanton, N.B. Smirnov

Keywords:

6H-SiC, Deep Center, DLTS, HCVD, MCTS

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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References

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