Paper Titles
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Deep Hole Traps in As-Grown 4H-SiC Epilayers Investigated by Deep Level Transient Spectroscopy
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Deep Level near EC – 0.55 eV in Undoped 4H-SiC Substrates
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Deep Traps in High-Purity Semi-Insulating 6H-SiC Substrates: Thermally Stimulated Current Spectroscopy
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Quenching Photoconductivity and Photoelectric Memory in 6H-SiC
p.513
Deep Level Point Defects in Semi-Insulating SiC
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Divacancy and Its Identification: Theory
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Deep Traps in High-Purity Semi-Insulating 6H-SiC Substrates: Thermally Stimulated Current Spectroscopy

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Abstract:

Thermally stimulated current spectroscopy (TSC) has been applied to characterize deep traps in high-purity semi-insulating 6H-SiC substrates. By using above bandgap to sub-bandgap light for illumination at 83 K and different applied biases, at least nine TSC traps in the temperature range of 80 to 400 K can be consistently observed. It is found that TSC peaks for T < 130 K are significantly affected by light and some peaks are strongly enhanced by the applied bias. Measured trap activation energies range from 0.15 eV to 0.76 eV. Theoretical fittings of selected traps give more accurate trap parameters. Based on literature results connected with deep traps in conductive 6H-SiC, the origin of these TSC traps is discussed.

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

509-512

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.509

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Online since:

October 2006

Authors:

Z.Q. Fang, B. Claflin, David C. Look, L. Polenta, J. Chen, Thomas Anderson, W.C. Mitchel

Keywords:

Deep Traps, High Purity Semi Insulating SiC, Thermally Stimulated Current Spectroscopy

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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References

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