Paper Titles
Shallow P Donors in 3C-, 4H- and 6H-SiC
p.593
Dependence of the Ionization Energy of Phosphorous Donor in 4H-SiC on Doping Concentration
p.597
Donor-Acceptor Pair Luminescence of Phosphorus-Aluminum and Nitrogen-Aluminum Pairs in 4H SiC
p.601
A Theoretical Study on Doping of Phosphorus in Chemical Vapor Deposited SiC Layers
p.605
New Aspects in n-type Doping of SiC with Phosphorus
p.609
Conditions and Limitations of Using Low-Temperature Photoluminescence to Determine Residual Nitrogen Levels in Semi-Insulating SiC Substrates
p.613
Evaluating and Improving SIMS Method for Measuring Nitrogen in SiC
p.617
Kinetic Mechanisms for the Deactivation of Nitrogen in SiC
p.621
Electrical Properties of Undoped 6H- and 4H-SiC Bulk Crystals Grown by Halide Chemical Vapor Deposition
p.625

New Aspects in n-type Doping of SiC with Phosphorus

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

609-612

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.609

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Online since:

October 2006

Authors:

E. Rauls, Uwe Gerstmann, Siegmund Greulich-Weber, Kurt Semmelroth, Gerhard Pensl, Eugene E. Haller

Keywords:

Density Function Theory (DFT), Doping, Effective-Mass Theory, Hyperfine Interaction

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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