Paper Titles
Electronic Structure and Magnetic Properties of Transition Metal Doped Silicon Carbide in Different Polytypes
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The Optical Admittance Spectroscopy of the Vanadium Donor and Acceptor Levels in Semi-Insulating 4H-SiC and 6H-SiC
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Luminescence and EPR Characterization of Vanadium Doped Semi-Insulating 4H SiC
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Co-Doping of Er-Doped SiC with Oxygen – A Promising Way Towards Efficient 1540 nm Emission at Room Temperature?
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Europium Induced Deep Levels in Hexagonal Silicon Carbide
p.659
Cathodoluminescence Measurements and Thermal Activation of Rare Earth Doped (Tb3+, Dy3+ and Eu3+) a-SiC Thin Films Prepared by rf Magnetron Sputtering
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Hydrogen Nanochemistry Achieving Clean and Pre-Oxidized Silicon Carbide Surface Metallization
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Temperature Induced Phase Transformation on the 4H-SiC(11-20) Surface
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SiC Pore Surfaces: Surface Studies of 4H-SiC(1-102) and 4H-SiC(-110-2)
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Europium Induced Deep Levels in Hexagonal Silicon Carbide

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Abstract:

Silicon carbide (SiC) was investigated for deep band gap states of europium by means of deep level transient spectroscopy (DLTS). The knowledge of the properties of optoelectrically active impurities or defects is essential for a detailed understanding of the energy-transfer process resulting in the observable excitations [1]. SiC-samples of the polytypes 4H as well as 6H are ion-implanted by different europium- isotopes in order to obtain a chemical identification of the characterized energy levels. Here the concentration sensitivity of the DLTS is applied to observe the elemental transmutation of the incorporated radioactive tracer atoms 146Eu (t1/2=4.51 d) and 147Eu (t1/2=24.6 d). DLTS on samples implanted with stable Eu-ions (153Eu) was carried out for comparison and manifestation of the results. From these studies 5 Eu-related deep band gap levels are established: in 4H-SiC two levels at EV+0.86(2) eV and EC−0.47(2) eV, and in 6H-SiC three levels at EV+0.88(2) eV, EC−0.29(2) eV and EC−0.67(2) eV.

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Silicon Carbide and Related Materials 2005 View Preview

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

659-662

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.659

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Online since:

October 2006

Authors:

G. Pasold, F. Albrecht, C. Hülsen, R. Sielemann, W. Witthuhn

Keywords:

Deep Level, DLTS, Europium (Eu), Radiotracer, Rare Earth (RE)

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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