Paper Titles
The Optical Admittance Spectroscopy of the Vanadium Donor and Acceptor Levels in Semi-Insulating 4H-SiC and 6H-SiC
p.647
Luminescence and EPR Characterization of Vanadium Doped Semi-Insulating 4H SiC
p.651
Co-Doping of Er-Doped SiC with Oxygen – A Promising Way Towards Efficient 1540 nm Emission at Room Temperature?
p.655
Europium Induced Deep Levels in Hexagonal Silicon Carbide
p.659
Cathodoluminescence Measurements and Thermal Activation of Rare Earth Doped (Tb3+, Dy3+ and Eu3+) a-SiC Thin Films Prepared by rf Magnetron Sputtering
p.663
Hydrogen Nanochemistry Achieving Clean and Pre-Oxidized Silicon Carbide Surface Metallization
p.667
Temperature Induced Phase Transformation on the 4H-SiC(11-20) Surface
p.673
SiC Pore Surfaces: Surface Studies of 4H-SiC(1-102) and 4H-SiC(-110-2)
p.677
Experimental Study of the Formation and Oxidation of the Sm/4H-SiC Surface Alloy
p.681

Cathodoluminescence Measurements and Thermal Activation of Rare Earth Doped (Tb3+, Dy3+ and Eu3+) a-SiC Thin Films Prepared by rf Magnetron Sputtering

Article Preview

Abstract:

We present comprehensive cathodoluminescence measurements from thin amorphous a- SiC films doped with rare earths. The a-SiC films were prepared by rf magnetron sputtering using a high purity SiC wafer in high purity argon atmosphere (5N, pressure approx. 0.2 mbar). The rare earth doping (Tb, Dy and Eu concentrations were below 2%) was performed by placing respective rare earth metal pieces of appropriate size onto the Silicon Carbide wafer. The rare earth ion emissions cover the colors green (Tb), yellow (Dy) and red (Eu). The optical and related structural properties of the films are correlated by means of high resolution transmission electron microscopy in combination with cathodoluminescence measurements in a scanning electron microscope. In addition, the corresponding compositions are determined by energy-dispersive x-ray analysis. The cathodoluminescence spectra of the rare earth 3+ ions are recorded in the visible at 20°C in the asgrown condition and after annealing treatments in the temperature range from 300°C to 1050°C by steps of 150°C. The anneal-related changes in the cathodoluminescence emission spectra and in the microstructure of the films are addressed. The SiC films show amorphous structure almost independent of the annealing treatment. Optimal annealing temperature for emissions of Tb3+ doped a-SiC were derived to be 600°C whereas Dy3+ and Eu3+ emissions increase at least up to 1050°C.

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2005 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

663-666

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.663

Citation:

Cite this paper

Online since:

October 2006

Authors:

Roland Weingärtner, Oliver Erlenbach, Francisco De Zela, Albrecht Winnacker, Isabel Brauer, Horst P. Strunk

Keywords:

Amorphous SiC, Cathodoluminescence, Dysprosium, Europium (Eu), Rare Earth Doping, Terbium, Thermal Annealing

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2006 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] A. J. Steckl and J. M. Zavada: MRS Bull. 24 (1999), p.16.

Google Scholar

[2] P. N. Favennec, H. L'Haridon, D. Moutonnet, M. Salvi and M. Gauneau: Mater. Res. Soc. Symp. Proc. Vol. 301 (1993), p.181.

Google Scholar

[3] A. R. Zanatta: Appl. Phys. Lett. 82 (2003), p.1395.

Google Scholar

[4] W. M. Jadwisienczak, H. J. Lozykowski, I. Berishev, A. Bensaoula and I. G. Brown: J. Appl. Phys. 89 (2001), p.4384.

Google Scholar

[5] W. M. Jadwisienczak, H. J. Lozykowski, F. Perjeru, H. Chen, M. Kordesch and I. G. Brown: Appl. Phys. Lett. 76 (2000), p.3376.

DOI: 10.1063/1.126652

Google Scholar

[6] S. B. Aldabergenova, M. Albrecht, H. P. Strunk, J. Viner, P. C. Taylor and A. A. Andreev: Mater. Sci. Eng. B 81 (2001), p.144.

Google Scholar

[7] S. B. Aldabergenova, A. Osvet, G. Frank, H. P. Strunk, P. C. Taylor and A. A. Andreev: J. Non-Cryst. Sol. 299-302 (2002), p.709.

DOI: 10.1016/s0022-3093(01)01211-x

Google Scholar

[8] V. I. Dimitrova, P. G. V. Patten, H. H. Richardson and M. E. Kordesch: Appl. Phys. Lett. 77 (2000), p.478.

Google Scholar

[9] J. Bullot and M. P. Schmidt: Phys. Stat. Sol. (b) 143 (1987), p.345.

Google Scholar

[10] Y. Hamakawa, D. Kruanagam, M. Deguchi, Y. Hattori, T. Toyama and H. Okamoto: Appl. Surf. Sci. 33-34 (1988), p.1142.

Google Scholar

[11] W. J. Choyke, R. P. Devaty, L. L. Clemen, M. Yoganathan, G. Pensl and C. Hässler: Appl. Phys. Lett. 65 (1994), p.1668.

DOI: 10.1063/1.112908

Google Scholar

[12] G. H. Dieke, Spectra and Energy Levels of Rare Earth Ions in (McGraw-Hill, 1968).

Google Scholar

[13] R. Weingärtner, O. Erlenbach, A. Winnacker, A. Welte, I. Brauer, H. P. Strunk, C. T. M. Ribieiro and A. R. Zanatta, accepted for publication in Optical Materials (2005).

Google Scholar