Paper Titles
Resistivity Distribution in Undoped 6H-SiC Boules and Wafers
p.51
The Method for Enhancing Nitrogen Doping in 6H-SiC Single Crystals Grown by Sublimation Process: The Effect of Si Addition in SiC Powder Source
p.55
A Study of Nitrogen Incorporation in PVT Growth of n+ 4H SiC
p.59
In Situ Observation of Mass Transfer in the CF-PVT Growth Process by X-Ray Imaging
p.63
Growth and Surface Morphologies of 6H SiC Bulk and Epitaxial Crystals
p.67
Processing of Poly-SiC Substrates with Large Grains for Wafer-Bonding
p.71
Modeling and Experimental Verification of SiC M-PVT Bulk Crystal Growth
p.75
Basal Plane Dislocation Dynamics in Highly p-Type Doped versus Highly n-Type Doped SiC
p.79
High Quality SiC Crystals Grown by the Physical Vapor Transport Method with a New Crucible Design
p.83

Growth and Surface Morphologies of 6H SiC Bulk and Epitaxial Crystals

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Abstract:

Bulk crystals and epitaxial layers of 6H SiC have been grown and their surface morphologies have been investigated. Seeded sublimation has been employed to obtain bulk 6H SiC crystals whereas a silicon tetrachloride-propane based chemical vapor deposition (CVD) was used for growing epitaxial layers. The hot-zones were designed using numerical simulation. Growth rates up to 200 μm/hr could be achieved in the CVD process. A new growth-assisted hydrogen etching was developed to reveal the distribution of the micropipes present in the substrate. Morphological features were studied using Nomarski, atomic force microscopy (AFM), and scanning electron microscopy (SEM), and the structural quality was evaluated using synchrotron X-ray topography.

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

67-70

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.67

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Online since:

October 2006

Authors:

Govindhan Dhanaraj, Yi Chen, Michael Dudley, Hui Zhang

Keywords:

Chemical Vapor Deposition (CVD), Crystal Growth, Dislocation, Etching, Micropipe, Physical Vapor Transport, PVT, Vapor Growth, X-Ray Topography

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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