Paper Titles
A Study of Nitrogen Incorporation in PVT Growth of n+ 4H SiC
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In Situ Observation of Mass Transfer in the CF-PVT Growth Process by X-Ray Imaging
p.63
Growth and Surface Morphologies of 6H SiC Bulk and Epitaxial Crystals
p.67
Processing of Poly-SiC Substrates with Large Grains for Wafer-Bonding
p.71
Modeling and Experimental Verification of SiC M-PVT Bulk Crystal Growth
p.75
Basal Plane Dislocation Dynamics in Highly p-Type Doped versus Highly n-Type Doped SiC
p.79
High Quality SiC Crystals Grown by the Physical Vapor Transport Method with a New Crucible Design
p.83
Active Thermal Interaction of Source and Crystal Surfaces in PVT SiC Crystal Growth
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The Influence of SiC Powder Source on 6H-SiC Single Crystals Grown by the Sublimation Method
p.91

Modeling and Experimental Verification of SiC M-PVT Bulk Crystal Growth

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Abstract:

We have studied the impact of the chemical nature of additional gases fed into the modified physical vapor transport (M-PVT) growth cell. In particular experiments were carried out using helium, argon, nitrogen and propane in the growth setup. Numerical modeling was used to address the underlying physical and chemical effects that impact the global temperature field. It is found that chemical decomposition of complex gases plays a secondary role as heat source or sink. However, temperature variations related to varying gas compositions fed to the systems are primarily induced by changes of the graphite foam isolation properties.

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

75-78

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.75

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Online since:

October 2006

Authors:

Peter J. Wellmann, Ralf Müller, Michel Pons

Keywords:

Modeling, M-PVT, Sublimation Growth

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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References

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