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Polytype Control in 6H-SiC Grown via Sublimation Method

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Abstract:

6H-SiC ingots were grown with different growth interfaces at different rates via the sublimation method. A model for the step flow growth mechanism is proposed to interpret the occurrence of 15R-SiC inclusions in the 6H-SiC single crystal. The results show that the 15R-SiC occurs more easily on the convex and the concave interface than on the slight convex interface and 15R-SiC inclusion also occurs when the growth rate of 6H-SiC exceeds the critical rate of 300 %m/h with the slight convex interface at the seed temperature 2250°C.

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Silicon Carbide and Related Materials 2005 View Preview

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

95-98

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.95

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Online since:

October 2006

Authors:

Xian Xiang Li, Shou Zhen Jiang, Xiao Bo Hu, Jie Dong, Juan Li, Xiu Fang Chen, Li Wang, Xian Gang Xu, Min Hua Jiang

Keywords:

Growth Interface, Growth Rate, Polytype, Step Flow Growth Mechanism

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] St. G. Muller, R. C. Glass, H. M. Hobgood, V. F. Tsvetkov, M. Brady, D. Henshall, J. R. Jenny, D. Malta, and C. H. Carter, Jr.: J. Crystal Growth, 211 (2000), p.325.

DOI: 10.1016/s0022-0248(99)00835-0

Google Scholar

[2] W. F. Knippenberg: Philips Res. Repts. 18 (1963), pp.161-274 (see p.262).

Google Scholar

[3] Han Rongjiang, The growth of large-diameter 6H-SiC single crystal and defects characterizations, Shandong University Doctoral Dissertation, 2004, p.61.

Google Scholar

[4] Z.G. Herro, B.M. Epelbaum, R. Weingartner, M. Bickermann, P. Masri, and A. Winnacker: J. Crystal Growth, 270 (2004), p.116.

Google Scholar

[5] P. Heuell, M.A. Kulakov, and B. Bullemer: Surface Science 331-333 (1995), p.965.

DOI: 10.1016/0039-6028(95)00365-7

Google Scholar