Paper Titles
High Temperature Applications Of 4H-SiC Vertical Junction Field-Effect Transistors And Schottky Diodes
p.987
High Temperature DC-DC Converter Performance Comparison Using SiC JFETs, BJTs and Si MOSFETs
p.991
Improved Efficiency in Power Factor Correction Circuits with a pn-Gated SiC FET
p.995
Microwave p-i-n Diodes and Switches Based on 4H-SiC
p.999
New Diode Designs Compatible with Vertical 4H-SiC JFET Fabrication Process
p.1003
OBIC Analysis of Different Edge Terminations of Planar 1.6 kV 4H-SiC Diodes
p.1007
Proposed Architecture for SiC Switches and Diodes in a Switch Mode Power Supply
p.1011
Advances in AlGaN/GaN/SiC Microwave Devices
p.1017
A Manipulation of Semiconducting GaN Nanowires by Dielectrophoresis Aligned Assembly Deposition (DAAD)
p.1023

New Diode Designs Compatible with Vertical 4H-SiC JFET Fabrication Process

Article Preview

Abstract:

In this paper, we propose new designs of Schottky, JBS and PiN diodes, which process technology is compatible with that of vertical power SiC JFETs. Three novel diode designs are proposed and we report their electrical characteristics. The P+ buried layer implant of the JFET is used for the PiN anode formation and for the P+ islands of the JBS. The Schottky diode differs from a standard Schottky diode since buried rings below the Schottky contact region have been included and the anode metal layer also contacts the buried P+ region at the diode periphery. With this last approach, the resulting Schottky diodes show low leakage currents and surge current capability, with a lower on-state voltage than the JBS.

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2006 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

1003-1006

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.1003

Citation:

Cite this paper

Online since:

September 2007

Authors:

Pierre Brosselard, Dominique Tournier, Miquel Vellvehi, Josep Montserrat, Philippe Godignon, José Millan

Keywords:

4H-SiC, Buried Field Rings, Junction Barrier Schottky (JBS) Diode, Schottky Diode

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2007 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] Data sheets available online at: http: /www. infineon. com.

Google Scholar

[2] Data sheets available online at: http: /www. cree. com.

Google Scholar

[3] J. Baliga, Modern Power Devices, Malabar: Krieger, 1992, 476 p., ISBN 0-89464-799-7.

Google Scholar

[4] P. Brosselard, J.L. Galvez, D. Tournier, X. Jordá, P. Godignon and J. Millan, 8th International Seminar on Power Semiconductors (ISPS06), Czech Republic, 29 August - 1 september (2006).

Google Scholar

[5] A. Mihaila, F. Udrea, P. Godignon, T. Trajkovic, G. Brezeanu, J. Rebollo, J. Millan, G. Amaratunga, Material Science Forum, vol. 433-436, pp.891-894, (2003).

DOI: 10.4028/www.scientific.net/msf.433-436.891

Google Scholar