Paper Titles
Homoepitaxial Growth of Vanadium-Doped 4H-SiC Using Bis-Trimethylsilylmethane and Verrocene Precursors
p.113
Improved Mesa Designs for the Growth of Thin 4H-SiC Homoepitaxial Cantilevers
p.117
In Situ Mass Spectrometry for Chemical Identification in SiC Epitaxial Deposition
p.121
In Situ Measurement of Nitrogen during Growth of 4H-SiC by CVD
p.125
Low Trap Concentration and Low Basal-Plane Dislocation Density in 4H-SiC Epilayers Grown at High Growth Rate
p.129
Low-Temperature Halo-Carbon Homoepitaxial Growth of 4H-SiC: Morphology, Doping, and Role of HCl Additive
p.133
Optimisation of Epitaxial Layer Growth with HCl Addition by Optical and Electrical Characterization
p.137
Progress in Cold-Wall Epitaxy for 4H-SiC High-Power Devices
p.141
Scaling of Chlorosilane SiC CVD to Multi-Wafer Epitaxy System
p.145

Low Trap Concentration and Low Basal-Plane Dislocation Density in 4H-SiC Epilayers Grown at High Growth Rate

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Abstract:

Fast homoepitaxial growth of 4H-SiC has been carried out on off-axis (0001) substrates by horizontal hot-wall CVD at 1600οC. High growth rate up to 24 μm/h has been achieved with mirror-like surface in the C/Si ratio range of 1.0-2.0. The Z1/2 and EH6/7 concentrations can be kept as low as 7 × 1011 cm-3 and 3 × 1011 cm-3, although an unknown trap (UT1) is observed with the concentration in the 1011 cm-3 range. The photoluminescence spectra are dominated by strong free exciton peaks, and the L1 peak is not observed. The basal-plane dislocation (BPD) density has decreased with increase in growth rate, and it can be reduced to 22 cm-2 when epilayers are grown on Chemical Mechanically Polished (CMP) substrates at a growth rate of 24 μm/h.

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

129-132

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.129

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Online since:

September 2007

Authors:

T. Hori, Katsunori Danno, Tsunenobu Kimoto

Keywords:

Basal Plane Dislocation (BPD), CMP, Deep Level, High Growth Rate, Hot-Wall Chemical Vapor Deposition, L1 Peak

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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References

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