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Initial Growth in 3C-SiC Sublimation Epitaxy on 6H-SiC

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Abstract:

The effect of initial growth condition of 3C-SiC growth on the C-face of 6H-SiC has been studied in sublimation epitaxy. The initial temperature increase to initiate the sublimation has a strong effect on the polytype formation using on-axis substrates. Polytype inclusions of 6H-SiC in the 3C-SiC layers is found to be related to spiral growth. The micropipe dissociation process is discussed. At the slowest ramp-up of the temperature the 3C-SiC does not contain any inclusions. In 1 degree off-oriented substrates there were no 3C-SiC formation. In this case the different ramp-up conditions has an influence on the heights of the steps.

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

195-198

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.195

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Online since:

September 2007

Authors:

Mikael Syväjärvi, Nut Sritirawisarn, Rositza Yakimova

Keywords:

3C-SiC, Epitaxy, Growth, Thick Layers

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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References

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