Paper Titles
An Inserted Epitaxial Layer for SiC Single Crystal Growth by the Physical Vapor Transport Method
p.9
Growth and Characterization of 13C Enriched 4H-SiC for Fundamental Materials Studies
p.13
Growth and Characterization of High-Quality 6H-SiC (0115) Bulk Crystals
p.17
Growth Induced Stacking Fault Formation in 4H-SiC
p.21
Hydrogen Effect on SiC Single Crystal Prepared by the Physical Vapor Transport Method
p.25
Effect of Growth Conditions on Cubic Silicon Carbide Crystals Grown from Silicon Solution
p.29
Growth and Electrical Characterization of 4H-SiC Epilayers
p.35
Growth of SiC from a Liquid Phase at Low Temperature
p.41
Thick Epilayer for Power Devices
p.47

Hydrogen Effect on SiC Single Crystal Prepared by the Physical Vapor Transport Method

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Abstract:

We investigated the effects of hydrogen addition to the growth process of SiC single crystal using sublimation physical vapor transport (PVT) techniques. Hydrogen was periodically added to an inert gas for the growth ambient during the SiC bulk growth. Grown 2”-SiC single crystals were proven to be the polytype of 6H-SiC and carrier concentration levels of about 1017/cm3 was determined from Hall measurements. As compared to the characteristics of SiC crystal grown without using hydrogen addition, the SiC crystal grown with periodically modulated hydrogen addition definitely exhibited lower carrier concentration and lower micropipe density as well as reduced growth rate.

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

25-28

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.25

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Online since:

September 2007

Authors:

Jung Gon Kim, Joon Ho An, Jung Doo Seo, Jung Kyu Kim, Myung Ok Kyun, Won Jae Lee, Il Soo Kim, Byoung Chul Shin, Kap Ryeol Ku

Keywords:

Crystal Boules, Crystal Quality, Hydrogen, PVT, Sublimation

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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