Paper Titles
Deep Levels in Electron-Irradiated n- and p-type 4H-SiC Investigated by Deep Level Transient Spectroscopy
p.331
Dependence of DAP Emission Properties on Impurity Concentrations in N-/B-co-doped 6H-SiC
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Determination of Impact Ionization Coefficients Measured from 4H Silicon Carbide Avalanche Photodiodes
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Electrical and Structural Properties of Al-Implanted and Annealed 4H-SiC
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Electrical Characterisation of 4H-SiC Epitaxial Samples Treated by Hydrogen or Helium
p.347
Electric-Field Screening Effects in the Micro-Photoluminescence Spectra of As-Grown Stacking Faults in 4H-SiC
p.351
EPR, ESE and Pulsed ENDOR Study of Nitrogen Related Centers in 4H-SiC Wafers Grown by Different Technologies
p.355
Excess Carrier Lifetimes in a Bulk p-Type SiC Wafer Measured by the Microwave Photoconductivity Decay Method
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FTIR Ellipsometry Analysis of the Internal Stress in SiC/Si MEMS
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Electrical Characterisation of 4H-SiC Epitaxial Samples Treated by Hydrogen or Helium

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Abstract:

This paper presents results of investigations about the influence of Hydrogen (introduced by annealing or plasma implantation), and Helium (ion implantation followed by a proper annealing for creating nanocavities) on the electrical properties of 4H-SiC n-type epitaxial samples. First, 4HSiC epitaxial layers were hydrogenated either by annealing under H2 ambient or by a RF plasma treatment. This last process took place before or after the deposition of Schottky contacts. Two different annealing temperatures were imposed (300°C and 400°C), as well as two plasma hydrogen doses for the same low energy. An improvement of electrical characteristics (25 % increasing of the minority carrier diffusion length, lowering of ideality factor, better switching characteristic) is detected for samples annealed at 400°C. The treatment of 4H-SiC surface in hydrogen plasma through Ni metal also increases the diffusion length, but not sufficiently to have an effect on I-V characteristics. A second set of 4H-SiC epitaxial layers were secondly implanted with He+ ions at two distinct temperatures. An annealing at 1700°C during 30 minutes under argon atmosphere was then carried out. C-V measurements revealed the presence of a high charge density zone around the nanocavities, containing fixed negative charges, opposite in sign to the donor atoms.

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

347-350

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.347

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Online since:

September 2007

Authors:

Laurent Ottaviani, Damien Barakel, Eugene B. Yakimov, Marcel Pasquinelli

Keywords:

EBIC, Helium, Hydrogen, Minority Carrier Diffusion Length, Nanocavities

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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