Paper Titles
Dependence of DAP Emission Properties on Impurity Concentrations in N-/B-co-doped 6H-SiC
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Determination of Impact Ionization Coefficients Measured from 4H Silicon Carbide Avalanche Photodiodes
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Electrical and Structural Properties of Al-Implanted and Annealed 4H-SiC
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Electrical Characterisation of 4H-SiC Epitaxial Samples Treated by Hydrogen or Helium
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Electric-Field Screening Effects in the Micro-Photoluminescence Spectra of As-Grown Stacking Faults in 4H-SiC
p.351
EPR, ESE and Pulsed ENDOR Study of Nitrogen Related Centers in 4H-SiC Wafers Grown by Different Technologies
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Excess Carrier Lifetimes in a Bulk p-Type SiC Wafer Measured by the Microwave Photoconductivity Decay Method
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FTIR Ellipsometry Analysis of the Internal Stress in SiC/Si MEMS
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Impurity Conduction in Silicon Carbide
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Electric-Field Screening Effects in the Micro-Photoluminescence Spectra of As-Grown Stacking Faults in 4H-SiC

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Abstract:

We report a comparison of continuous-wave photoluminescence spectra with spatiallyresolved micro-photoluminescence data collected at low temperature on as-grown stacking faults in a 4H-SiC epitaxial layer. We find that the defects have a large triangular shape (50 μm x 50 μm x 50 μm) and that the maximum signal wavelength shifts when scanning across one triangular defect. These results show that the built-in electric field in the stacking fault well can be screened, more or less depending on the incoming light intensity.

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

351-354

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.351

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Online since:

September 2007

Authors:

Sandrine Juillaguet, T. Guillet, R. Bardoux, Jean Camassel, Thierry Chassagne

Keywords:

4H-SiC, Quantum Well, Stacking Fault

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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