Paper Titles
Electrical and Structural Properties of Al-Implanted and Annealed 4H-SiC
p.343
Electrical Characterisation of 4H-SiC Epitaxial Samples Treated by Hydrogen or Helium
p.347
Electric-Field Screening Effects in the Micro-Photoluminescence Spectra of As-Grown Stacking Faults in 4H-SiC
p.351
EPR, ESE and Pulsed ENDOR Study of Nitrogen Related Centers in 4H-SiC Wafers Grown by Different Technologies
p.355
Excess Carrier Lifetimes in a Bulk p-Type SiC Wafer Measured by the Microwave Photoconductivity Decay Method
p.359
FTIR Ellipsometry Analysis of the Internal Stress in SiC/Si MEMS
p.363
Impurity Conduction in Silicon Carbide
p.367
Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC
p.371
Investigation of Charge Carrier Lifetime Temperature-Dependence in 4H-SiC Diodes
p.375

Excess Carrier Lifetimes in a Bulk p-Type SiC Wafer Measured by the Microwave Photoconductivity Decay Method

Article Preview

Abstract:

We carried out mapping of the excess carrier lifetime for a bulk p-type 4H-SiC wafer by the microwave photoconductivity decay (μ-PCD) method, and we compared the lifetime map with structural defect distribution. Several small regions with short lifetimes compared with surrounding parts are found, and they correspond to regions with high-density structural defects. Excess carrier decay curves for this wafer show a slow component, which originates from minority carrier traps. From temperature dependence of the excess carrier decay curve, we found decrease of the time constant of the slow component with increasing temperature. We compared the activation energy of the time constant with that obtained from the numerical simulation, and concluded that the energy level for the minority carrier trap would be 125 meV from the conduction band.

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2006 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

359-362

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.359

Citation:

Cite this paper

Online since:

September 2007

Authors:

Masahiko Kawai, Tatsuhiro Mori, Masashi Kato, Masaya Ichimura, Shingo Sumie, Hidehisa Hashizume

Keywords:

Excess Carrier Lifetime, Microwave Photoconductivity Decay, Minority Carrier Trap, Structural Defects, Temperature Dependence

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2007 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] J. Zhang, L. Storasta, J. P. Bergman, N. T. Son and E. Janzén: J. Appl. Phys. Vol. 93 (2003), p.4708.

Google Scholar

[2] P. B. Klein, B. V. Shanabrook, S. W. Huh, A. Y. Polyakov, M. Skowronski, J. J. Sumakeris and M. J. O'Loughlin: Appl. Phys. Lett. Vol. 88 (2006), p.052110.

DOI: 10.1063/1.2170144

Google Scholar

[3] T. Mori, M. Kato, H. Watanabe, M. Ichimura, E. Arai, S. Sumie and H. Hashizume: Jpn. J. Appl. Phys. Vol. 44 (2005), p.8333.

DOI: 10.1143/jjap.44.8333

Google Scholar

[4] S.G. Sridhara, T. J. Eperijesi, R. P. Devaty and W. J. Choyke: Mater. Sci. Eng. B Vol. 61-62 (1999), p.229.

Google Scholar

[5] S. Sumie, F. Ojima, K. Yamashita, K. Iba and H. Hashizume: J. Electrochem. Soc. Vol. 152 (2005) G99.

DOI: 10.1149/1.1825911

Google Scholar

[6] J. W. Orton and P. Blood: The electrical characterization of semiconductors: Measurement of minority carrier properties (Academic Press, London, 1990), p.19.

Google Scholar

[7] M. Ichimura, H. Tajiri, Y. Morita, N. Yamada and A. Usami: Appl. Phys. Lett. Vol. 70 (1997), p.1745.

Google Scholar

[8] M. Ichimura, N. Yamada, H. Tajiri and E. Arai: J. Appl. Phys. Vol. 84 (1998), p.2727. 100 10002. 4 2. 6 2. 8 3 3. 2 3. 4 Numerical simulation Experimental data 1000/T (K-1 ) τT2 (sK2).

Google Scholar