Paper Titles
Hydrogen Effect on SiC Single Crystal Prepared by the Physical Vapor Transport Method
p.25
Effect of Growth Conditions on Cubic Silicon Carbide Crystals Grown from Silicon Solution
p.29
Growth and Electrical Characterization of 4H-SiC Epilayers
p.35
Growth of SiC from a Liquid Phase at Low Temperature
p.41
Thick Epilayer for Power Devices
p.47
4H-SiC Epitaxial Layers Grown on On-Axis Si-Face Substrate
p.53
A Designed Experiment Approach to Improvement and Understanding of the SiC Epitaxial Growth Process
p.57
Analysis of SiC CVD Growth in a Horizontal Hot-Wall Reactor by Experiment and 3D Modelling
p.61
Boron Doping during Vapor-Liquid-Solid Growth of Homoepitaxial 4H-SiC Layers
p.65

Thick Epilayer for Power Devices

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Abstract:

Growth of thick epitaxial SiC layers needed for high power devices is presented for horizontal hot-wall CVD (HWCVD) reactors. We demonstrate thickness of epilayer of 100 μm and more with good morphology, low-doping with no doping variation through the whole thick layer and reasonable carrier lifetime which mainly depends on the substrate quality. Typical epidefects are described and their density can dramatically be reduced when choosing correctly the growth conditions as well as the polishing of the surface prior to the growth. The control of the doping and thickness uniformities as well as the run-to-run reproducibility is also presented. Various characterization techniques such as optical microscopy, AFM, reflectance, CV, PL and minority carrier lifetime have been used. Results of high-voltage SiC Schottky power devices are presented.

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

47-52

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.47

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Online since:

September 2007

Authors:

Anne Henry, Jawad ul Hassan, Henrik Pedersen, Franziska Christine Beyer, Peder Bergman, Sven Andersson, Erik Janzén, Philippe Godignon

Keywords:

Homoepitaxy, Hot-Wall Chemical Vapor Deposition, Morpholoy, Schottky Diode, Thick Epilayers

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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