Paper Titles
Isochronal Annealing Study of Deep Levels in Hydrogen Implanted p-Type 4H-SiC
p.591
Modification of Surface Layer during High Temperature Annealing and its Effects on the SiC Diode Characteristics
p.595
Peculiarities of Neutron-Transmutation Phosphorous Doping of SiC Enriched with 30Si Isotope: Electron Paramagnetic Resonance Study
p.599
Reduction of Traps and Improvement of Carrier Lifetime in SiC Epilayer by Ion Implantation
p.603
Selenium and Tellurium Double Donors in SiC
p.607
Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiC
p.611
Dynamical Simulation of SiO2/4H-SiC(0001) Interface Oxidation Process: from First-Principles
p.615
Trap Assisted Gas Sensing Mechanism in MISiC Capacitors
p.621
4H-SiC Metal-Oxide-Semiconductor (MOS) Capacitors Fabricated by Oxidation in a Tungsten Lamp Furnace in Combination with a Microwave Plasma and Subsequent Deposition of Al2O3
p.627

Selenium and Tellurium Double Donors in SiC

Article Preview

Abstract:

Selenium (Se) and tellurium (Te) ions are implanted into n-type 6H-, 4H- and 3C-SiC epilayers. Double-correlated deep level transient spectroscopy investigations reveal that both Se and Te atoms form double donors in SiC. The number of double donors observed corresponds to the number of inequivalent lattice sites of the particular SiC polytype. This observation is a strong hint that Se and Te atoms reside on lattice sites. The activation energies FEa of Te double donors are larger than the corresponding ones of Se double donors.

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2006 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

607-610

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.607

Citation:

Cite this paper

Online since:

September 2007

Authors:

Sergey A. Reshanov, Heiko B. Weber, Gerhard Pensl, Adolf Schöner, Hiroyuki Nagasawa

Keywords:

Double Donors, Double-Correlated DLTS, Selenium, Tellurium

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2007 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] H. G. Grimmeiss, E. Janzén, H. Ennen, O. Schirmer, J. Schneider, R. Wörner, C. Holm, and E. Sirtl: Phys. Rev. B Vol. 24 (1981), p.4571.

DOI: 10.1103/physrevb.24.4571

Google Scholar

[2] E. Janzén, R. Stedman, G. Grossmann, and H. G. Grimmeiss: Phys. Rev. B Vol. 29 (1984), p. (1907).

Google Scholar

[3] S.A. Reshanov, G. Pensl, H. Nagasawa, and A. Schöner: J. Appl. Phys. Vol. 99 (2006), p.123717.

Google Scholar

[4] G. Pensl and T. Dalibor, in: Impurities and Defects in Group IV Elements, IV-IV and III-VCompounds, Part B, Landolt-Börnstein, New Series, Vol. 41, Subvolume A2, Supplement to Vols. III/22b, edited by M. Schulz, Springer, Berlin (2003).

DOI: 10.1007/10681604_135

Google Scholar

[5] J. L. Hartke: J. Appl. Phys. Vol. 39 (1968), p.4871.

Google Scholar