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4H-SiC Epitaxial Layers Grown on On-Axis Si-Face Substrate
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A Designed Experiment Approach to Improvement and Understanding of the SiC Epitaxial Growth Process
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Analysis of SiC CVD Growth in a Horizontal Hot-Wall Reactor by Experiment and 3D Modelling
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Boron Doping during Vapor-Liquid-Solid Growth of Homoepitaxial 4H-SiC Layers
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Comparison of Chlorine Based In Situ Etching of 4H SiC Substrates
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Analysis of SiC CVD Growth in a Horizontal Hot-Wall Reactor by Experiment and 3D Modelling

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Abstract:

A fully-comprehensive three-dimensional simulation of a CVD epitaxial growth process has been undertaken and is reported here. Based on a previously developed simulation platform, which connects fluid dynamics and thermal temperature profiling with chemical species kinetics, a complete model of the reaction process in a low pressure hot-wall CVD reactor has been developed. Close agreement between the growth rate observed experimentally and simulated theoretically has been achieved. Such an approach should provide the researcher with sufficient insight into the expected growth rate in the reactor as well as any variations in growth across the hot zone.

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

61-64

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.61

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Cite this paper

Online since:

September 2007

Authors:

Y. Shishkin, Rachael L. Myers-Ward, Stephen E. Saddow, Alexander Galyukov, A.N. Vorob'ev, D. Brovin, D. Bazarevskiy, R.A. Talalaev, Yuri Makarov

Keywords:

Chemical Vapor Deposition (CVD), Epitaxy, Modeling, Reactor, Simulation

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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