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Study of Polyimide Films as Passivation for High Temperature High Voltage Silicon Carbide Devices

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Abstract:

Characterizations of Al/Polyimide/Al capacitors in a temperature range extended up to 400°C are presented. The aim is to determine the retained BPDA/PPD polyimide (PI) intrinsic dielectric and conduction properties, as a first stage in the evaluation of its ability to be applied as a passivation material for high temperature operating silicon carbide power devices. The dielectric constant, dielectric loss factor, and the static leakage current of the “as-prepared” Al/PI/Al structures are strongly affected above 175°C, reaching critical values at 400°C with regard to the aimed application. However, an evolution of these characteristics after the sample exposure at high temperature is observed, resulting in a very good and stabilized electrical behavior even at 400°C.

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Silicon Carbide and Related Materials 2006 View Preview

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

671-674

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.671

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Online since:

September 2007

Authors:

Sombel Diaham, Marie Laure Locatelli, Thierry Lebey

Keywords:

Dielectric Constant, Dielectric Loss, High-Temperature, Leakage Current, Passivation, Polyimide

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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