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Plasma Etching for Backside Wafer Thinning of SiC

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Abstract:

In this initial phase of work, two methods of backside wafer thinning using ICP plasma etching of two-inch SiC substrates have been considered. Plasma processes were optimized for nonbonded and bonded wafers. The non-bonded process was used to etch 250μm thick substrates to a final thickness of 100μm. The bonded process was used to etch glass bonded SiC substrates mechanically ground to 130μm thick and plasma etched to a final thickness of 100μm. Etch rate measurements and surface analysis were performed using a profilometer and white light interferometry. Etch rates of 3.4μm/min were achieved for the bonded process and 2.0μm/min for the non-bonded process. The surface morphology for the non-bonded process was three to four times lower than the bonded process. The part mechanically ground samples showed evidence of surface damage from the grinding process after plasma etching.

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Silicon Carbide and Related Materials 2006 View Preview

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

729-732

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.729

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Online since:

September 2007

Authors:

Kenneth M. Robb

Keywords:

Plasma Etching, Plasma Processing, Wafer Thinning, White Light Interferometry

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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References

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