Paper Titles
Boron Doping during Vapor-Liquid-Solid Growth of Homoepitaxial 4H-SiC Layers
p.65
Comparison of Chlorine Based In Situ Etching of 4H SiC Substrates
p.69
CVD of 6H-SiC on Non-Basal Quasi Polar Faces
p.73
Developing an Effective and Robust Process for Manufacturing Bipolar SiC Power Devices
p.77
Development of High Growth Rate SiC Epi-Reactor with Controlled Thermal Gradient
p.81
Effect of Additional Silane on In Situ H2 Etching prior to 4H-SiC Homoepitaxial Growth
p.85
Epitaxial Growth of 4H-SiC on (000-1) C-Face Substrates by Cold-Wall and Hot-Wall Chemical Vapor Deposition
p.89
Film Morphology and Process Conditions in Epitaxial Silicon Carbide Growth via Chlorides Route
p.93
Growth and Photoluminescence Study of Aluminium Doped SiC Epitaxial Layers
p.97

Development of High Growth Rate SiC Epi-Reactor with Controlled Thermal Gradient

Article Preview

Abstract:

A vertical hot-wall type reactor, with a unique structure designed for controlling both gas flow behavior and thermal gradient (T/mm) on the susceptor surface, was developed. The simulation results indicate that depending on the height of the epitaxy room (h), the T/mm can be changed from a negative to a positive value. Preliminary epitaxial growth experiments resulted in a maximum growth rate of 51 μm/h, 4-inch area uniformity of σ/mean=1.7% for growth rate and σ/mean=21.5 % for doping concentration, and Z1/2 trap concentration of 9×1012 cm-3 at a growth rate of 43 μm/h.

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2006 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

81-84

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.81

Citation:

Cite this paper

Online since:

September 2007

Authors:

Masahiko Ito, Hidekazu Tsuchida, Isaho Kamata, L. Storasta

Keywords:

Epitaxial Growth, High Growth Rate, Large Area Uniformity, Reactor Design, Thermal Gradient

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2007 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] H. Tsuchida, I. Kamata, S. Izumi, T. Tawara, T. Jikimoto, T. Miyanagi, T. Nakamura and K. Izumi, Mat. Res. Soc. Symp. Proc. Vol. 815 (2004), p. J2. 1. 1.

DOI: 10.1557/proc-815-j2.1

Google Scholar

[2] I. Pintilie, L. Pintilie, K. Irmscher and B. Thomas, Appl. Phys. Lett. Vol. 81 (2002), p.4841.

Google Scholar

[3] H. Fujiwara, K. Danno, T. Kimoto, T. Tojo, H. Matsunami, J. Cryst. Growth Vol. 281 (2005) p.370.

Google Scholar

[4] A.A. Burk, M.J. O'Loughlin, M.J. Paisley, A.R. Powell, M.F. Brady, R.T. Leonard, St.G. Müller and S.T. Allen, Mater. Sci. Forum Vol. 483-485 (2005), p.137.

Google Scholar

[5] H. Tsuchida, I. Kamata, T. Jikimoto, K. Izumi, J. Cryst. Growth Vol. 237-239 (2002), p.1206.

Google Scholar

[6] CFD Research Corporation http: /www. cfdrc. com/ Fig. 4 (a) Growth rate versus gas flow rate and (b) growth rate versus C/Si rate Fig. 5 The uniformity of the growth rate and doping concentration from the center of the susceptor 0. 6 0. 8 1. 0 1. 2 1. 4.

DOI: 10.17816/ecogen15221-30-763

Google Scholar

[20] [30] [40] [50] [30] 40 50 60 70 80.

Google Scholar

[10] [20] [30] [40] [50] T: 1825 C P: 40 Torr H2 flow: 75slm h = 105mm Growth rate (µm/h) C/Si (b) (a) T: 1825 C P: 60 Torr C/Si: 1. 0 h = 105mm H2 flow (slm).

Google Scholar

[4] [8] [12] [16] [20] [24] [28] 0 10 20 30 40 50 60 70 80 1E16 1E17 1E18 Growth rate (µm/h) Doping Concentration (cm-3 ) Position X (mm).

Google Scholar