Paper Titles
Electrical Characterization of High Voltage 4H-SiC pin Diodes Fabricated Using a Low Basal-Plane Dislocations Process
p.921
Evaluation of Termination Techniques for 4H-SiC Pin Diodes and Trench JFETs
p.925
Fabrication of pn-Junction Diode for N+ Implanted 4H-SiC(0001) Annealed by EBAS
p.929
Microwave p-i-n Diodes Fabricated on 4H-SiC Material Grown by Sublimation Epitaxy in Vacuum
p.933
Potential Benefits of Silicon Carbide Zener Diodes Used as Components of Intrinsically Safe Barriers
p.937
4H-SiC High Temperature Spectrometers
p.941
4H-SiC Schottky Array Photodiodes for UV Imaging Application Based on the Pinch-off Surface Effect
p.945
Fabrication and Test of 3C-SiC Electrostatic Resonators
p.949
Study of Dark Currents in 4H-SiC UV APDs with Separate Absorption and Multiplication Regions
p.953

Potential Benefits of Silicon Carbide Zener Diodes Used as Components of Intrinsically Safe Barriers

Article Preview

Abstract:

Zener diodes are widely used in electrical barriers to protect equipment operating in a potentially explosive atmosphere. Although normally not conducting, the zeners must have a high power rating so that their junction temperature meets safety factors when shunting the maximum fuse current. This often requires two or three lower voltage commercial zeners connected in series. Silicon carbide diodes have much higher thermal conductivity and maximum allowed junction temperature, so it should be possible to use one SiC zener in the place of two or three commercial diodes and/or allow use of higher fuse ratings. Low voltage SiC Zener diodes were fabricated and tested to evaluate potential benefits of their application as a component of intrinsically safe barriers. The diodes demonstrated mixed avalanche-tunnel breakdown at reverse bias voltages of 23 V with positive temperature coefficients of breakdown voltages of about 0.4 mV/°C. The diodes with mesa area of 4×10-4cm2 had maximum DC Zener current of 1.2 A and were capable of operating at ambient temperatures up to 500°C.

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2006 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

937-940

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.937

Citation:

Cite this paper

Online since:

September 2007

Authors:

P. Lark, Konstantin Vassilevski, Irina P. Nikitina, G.J. Phelps, Alton B. Horsfall, Nicolas G. Wright

Keywords:

Avalanche Breakdown, Intrinsically Safe Barrier, Zener Diode

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2007 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] M. Levinshtein, S. Rumyantsev, M. Shur: Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiC, SiGe, John Wiley & Sons, Inc., 2001, ISBN 0-471-35827-4.

Google Scholar

[2] Cree, Inc., information on http: /www. cree. com.

Google Scholar

[3] K. Vassilevski, K. Zekentes, E.V. Bogdanova, M. Lagadas, A. Zorenko: Mater. Sci. Forum Vol. 353-356 (2001), p.735.

DOI: 10.4028/www.scientific.net/msf.353-356.735

Google Scholar

[4] P. Godignon, X. Jorda, R. Nipoti, G. Cardinali, N. Mestres: Mater. Sci. Forum, Vol. 389-393 (2002), p.1317.

DOI: 10.4028/www.scientific.net/msf.389-393.1317

Google Scholar

[5] A. Strelchuk, M. Anikin, A. Andreev, V. Zelenin, A. Lebedev, M. Rasstegaeva, N. Savkina, A. Syrkin, V. Chelnokov, L. Shestopalova: J. of Techn. Physics Vol. 40 (1995), p.801.

Google Scholar

[6] Operating instructions/system description Zener barriers, Manual, Pepperl+Fuchs, information on http: /www. pepperl-fuchs. com/selector/navi/productInfo/doct/tdoct0185f_eng. pdf.

Google Scholar

[7] K.V. Vassilevski, K. Zekentes, A.B. Horsfall, C. M. Johnson, N. G. Wright: Materials Science Forum, V. 457-460 (2004), p.1029.

DOI: 10.4028/www.scientific.net/msf.457-460.1029

Google Scholar

[8] I.P. Nikitina, K.V. Vassilevski, N.G. Wright, A.B. Horsfall, A.G. O'Neill, C.M. Johnson: Journal of Applied Physics, V. 97 (2005), p.083709.

Google Scholar

[9] K. Vassilevski, K. Zekentes: Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide, U.S. Patent No. 6, 599, 644, (2003).

Google Scholar

[10] Intrinsic Safety Explosion Protection, Manual, Pepperl+Fuchs, information on http: /www. pepperl-fuchs. com/selector/navi/productInfo/doct/tdoct0745a_eng. pdf.

Google Scholar

[11] Product specification, 1N5333B Series, ON Semiconductor, information on http: /www. onsemi. com.

Google Scholar